IPI120N06S4H1AKSA2
  • Share:

Infineon Technologies IPI120N06S4H1AKSA2

Manufacturer No:
IPI120N06S4H1AKSA2
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPI120N06S4H1AKSA2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 120A TO262-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:270 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:21900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3-1
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
0 Remaining View Similar

In Stock

-
105

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPI120N06S4H1AKSA2 IPI120N06S4H1AKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V 2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 200µA 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 270 nC @ 10 V 270 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 21900 pF @ 25 V 21900 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 250W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO262-3-1 PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

FDPF20N50FT
FDPF20N50FT
onsemi
MOSFET N-CH 500V 20A TO220F
RJK03M6DNS-00#J5
RJK03M6DNS-00#J5
Renesas Electronics America Inc
MOSFET N-CH 30V 16A 8HWSON
NTHL095N65S3H
NTHL095N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
SQJA70EP-T1_GE3
SQJA70EP-T1_GE3
Vishay Siliconix
MOSFET N-CH 100V 14.7A PPAK SO-8
SI7139DP-T1-GE3
SI7139DP-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 40A PPAK SO-8
IRFS3207ZTRRPBF
IRFS3207ZTRRPBF
Infineon Technologies
MOSFET N-CH 75V 120A D2PAK
BUK7526-100B,127
BUK7526-100B,127
NXP USA Inc.
MOSFET N-CH 100V 49A TO220AB
SIR494DP-T1-GE3
SIR494DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 12V 60A PPAK SO-8
IXTA3N110
IXTA3N110
IXYS
MOSFET N-CH 1100V 3A TO263
BSP171PL6327HTSA1
BSP171PL6327HTSA1
Infineon Technologies
MOSFET P-CH 60V 1.9A SOT223-4
STP30NM60N
STP30NM60N
STMicroelectronics
MOSFET N-CH 600V 25A TO220AB
APT24F50S
APT24F50S
Microsemi Corporation
MOSFET N-CH 500V 24A D3PAK

Related Product By Brand

C165LF3VHABXUMA1
C165LF3VHABXUMA1
Infineon Technologies
C165LF - LEGACY 16-BIT MICROCONT
XMC1201T038F0064ABXUMA1
XMC1201T038F0064ABXUMA1
Infineon Technologies
IC MCU 32BIT 64KB FLASH 38TSSOP
TLE8104EXT
TLE8104EXT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-20
IR3842WMTRPBF
IR3842WMTRPBF
Infineon Technologies
IC REG BUCK ADJUSTABLE 4A 15PQFN
CY2547QI
CY2547QI
Infineon Technologies
IC MULTI/CLOCK GENERATOR 24QFN
CY8C4124LQI-S412
CY8C4124LQI-S412
Infineon Technologies
IC MCU 32BIT 16KB FLASH 32QFN
CY95F698KNPMC1-G-UNE2
CY95F698KNPMC1-G-UNE2
Infineon Technologies
IC MCU 8BIT 60KB FLASH 52LQFP
CY9AF144NAPMC-G-JNK1E2
CY9AF144NAPMC-G-JNK1E2
Infineon Technologies
IC MCU 32BIT 288KB FLASH 100LQFP
CY7C1360C-166BZC
CY7C1360C-166BZC
Infineon Technologies
IC SRAM 9MBIT PARALLEL 165FBGA
CY7C1414KV18-333BZC
CY7C1414KV18-333BZC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA
CY7C1460KV33-200AXCT
CY7C1460KV33-200AXCT
Infineon Technologies
IC SRAM 36MBIT PARALLEL 100TQFP
CY7C1314SV18-250BZC
CY7C1314SV18-250BZC
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA