Please send RFQ , we will respond immediately.
| Part Number | IPI100N06S3-03 | IPI100N06S3-04 | IPI100N06S3L-03 | IPI100N04S3-03 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Obsolete | Obsolete | Obsolete | Active |
| FET Type | N-Channel | N-Channel | N-Channel | - |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Drain to Source Voltage (Vdss) | 55 V | 55 V | 55 V | - |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | 100A (Tc) | 100A (Tc) | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 5V, 10V | - |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 80A, 10V | 4.4mOhm @ 80A, 10V | 3mOhm @ 80A, 10V | - |
| Vgs(th) (Max) @ Id | 4V @ 230µA | 4V @ 150µA | 2.2V @ 230µA | - |
| Gate Charge (Qg) (Max) @ Vgs | 480 nC @ 10 V | 314 nC @ 10 V | 550 nC @ 10 V | - |
| Vgs (Max) | ±20V | ±20V | ±16V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 21620 pF @ 25 V | 14230 pF @ 25 V | 26240 pF @ 25 V | - |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 300W (Tc) | 214W (Tc) | 300W (Tc) | - |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | - |
| Mounting Type | Through Hole | Through Hole | Through Hole | - |
| Supplier Device Package | PG-TO262-3 | PG-TO262-3 | PG-TO262-3 | - |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | - |
