IPI06CN10N G
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Infineon Technologies IPI06CN10N G

Manufacturer No:
IPI06CN10N G
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPI06CN10N G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 100A TO262-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 180µA
Gate Charge (Qg) (Max) @ Vgs:139 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9200 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number IPI06CN10N G IPI08CN10N G   IPI16CN10N G   IPI26CN10N G   IPI04CN10N G   IPI05CN10N G  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 95A (Tc) 53A (Tc) 35A (Tc) 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 100A, 10V 8.5mOhm @ 95A, 10V 16.2mOhm @ 53A, 10V 26mOhm @ 35A, 10V 4.2mOhm @ 100A, 10V 5.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 180µA 4V @ 130µA 4V @ 61µA 4V @ 39µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 139 nC @ 10 V 100 nC @ 10 V 48 nC @ 10 V 31 nC @ 10 V 210 nC @ 10 V 181 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9200 pF @ 50 V 6660 pF @ 50 V 3220 pF @ 50 V 2070 pF @ 50 V 13800 pF @ 50 V 12000 pF @ 50 V
FET Feature - - - - - -
Power Dissipation (Max) 214W (Tc) 167W (Tc) 100W (Tc) 71W (Tc) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package PG-TO262-3 PG-TO262-3 PG-TO262-3 PG-TO262-3 PG-TO262-3 PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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