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| Part Number | IPI05CN10N G | IPI06CN10N G | IPI08CN10N G | IPI35CN10N G | IPI04CN10N G |
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Obsolete | Obsolete | Obsolete | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 100 V | 100 V | 100 V | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | 100A (Tc) | 95A (Tc) | 27A (Tc) | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 5.4mOhm @ 100A, 10V | 6.5mOhm @ 100A, 10V | 8.5mOhm @ 95A, 10V | 35mOhm @ 27A, 10V | 4.2mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 180µA | 4V @ 130µA | 4V @ 29µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 181 nC @ 10 V | 139 nC @ 10 V | 100 nC @ 10 V | 24 nC @ 10 V | 210 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 12000 pF @ 50 V | 9200 pF @ 50 V | 6660 pF @ 50 V | 1570 pF @ 50 V | 13800 pF @ 50 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 300W (Tc) | 214W (Tc) | 167W (Tc) | 58W (Tc) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | PG-TO262-3 | PG-TO262-3 | PG-TO262-3 | PG-TO262-3 | PG-TO262-3 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
