IPI04N03LA
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Infineon Technologies IPI04N03LA

Manufacturer No:
IPI04N03LA
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPI04N03LA Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 80A TO262-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.2mOhm @ 55A, 10V
Vgs(th) (Max) @ Id:2V @ 60µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3877 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):107W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number IPI04N03LA IPI05N03LA   IPI06N03LA   IPI09N03LA   IPI14N03LA   IPF04N03LA   IPI03N03LA  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Discontinued at Digi-Key Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V 25 V 25 V 25 V 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc) 50A (Tc) 50A (Tc) 30A (Tc) 50A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 55A, 10V 4.9mOhm @ 55A, 10V 6.2mOhm @ 30A, 10V 9.2mOhm @ 30A, 10V 13.9mOhm @ 30A, 10V 3.8mOhm @ 50A, 10V 3mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 2V @ 60µA 2V @ 50µA 2V @ 40µA 2V @ 20µA 2V @ 20µA 2V @ 30µA 2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 5 V 25 nC @ 5 V 22 nC @ 5 V 13 nC @ 5 V 8.3 nC @ 5 V 41 nC @ 5 V 57 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3877 pF @ 15 V 3110 pF @ 15 V 2653 pF @ 15 V 1642 pF @ 15 V 1043 pF @ 15 V 5199 pF @ 15 V 7027 pF @ 15 V
FET Feature - - - - - - -
Power Dissipation (Max) 107W (Tc) 94W (Tc) 83W (Tc) 63W (Tc) 46W (Tc) 115W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Surface Mount Through Hole
Supplier Device Package PG-TO262-3 PG-TO262-3 PG-TO262-3 PG-TO262-3 PG-TO262-3 PG-TO252-3-23 PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-252-3, DPak (2 Leads + Tab), SC-63 TO-262-3 Long Leads, I²Pak, TO-262AA

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