Infineon Technologies-IPI041N12N3GAKSA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	120 V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	4.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:	4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:	211 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	13800 pF @ 60 V
FET Feature:	-
Power Dissipation (Max):	300W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO262-3
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA

Infineon Technologies IPI041N12N3GAKSA1