IPI037N08N3GXKSA1
  • Share:

Infineon Technologies IPI037N08N3GXKSA1

Manufacturer No:
IPI037N08N3GXKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPI037N08N3GXKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 80V 100A TO262-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:3.75mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.5V @ 155µA
Gate Charge (Qg) (Max) @ Vgs:117 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8110 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
0 Remaining View Similar

In Stock

-
17

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPI037N08N3GXKSA1 IPI037N08N3GHKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 3.75mOhm @ 100A, 10V 3.75mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 155µA 3.5V @ 155µA
Gate Charge (Qg) (Max) @ Vgs 117 nC @ 10 V 117 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8110 pF @ 40 V 8110 pF @ 40 V
FET Feature - -
Power Dissipation (Max) 214W (Tc) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO262-3 PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

RFP70N06
RFP70N06
onsemi
MOSFET N-CH 60V 70A TO220-3
HUFA75309P3
HUFA75309P3
Fairchild Semiconductor
MOSFET N-CH 55V 19A TO220-3
IPN80R1K4P7ATMA1
IPN80R1K4P7ATMA1
Infineon Technologies
MOSFET N-CH 800V 4A SOT223
FDB045AN08A0
FDB045AN08A0
onsemi
MOSFET N-CH 75V 19A/90A D2PAK
STD4N90K5
STD4N90K5
STMicroelectronics
MOSFET N-CH 900V 3A DPAK
SPA11N60CFDXKSA1
SPA11N60CFDXKSA1
Infineon Technologies
MOSFET N-CH 600V 11A TO220-3
PSMN1R5-40ES,127
PSMN1R5-40ES,127
Nexperia USA Inc.
MOSFET N-CH 40V 120A I2PAK
NTB5605P
NTB5605P
onsemi
MOSFET P-CH 60V 18.5A D2PAK
FDPF17N45T
FDPF17N45T
onsemi
MOSFET N-CH 450V 17A TO220F
STI18NM60N
STI18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A I2PAK
AOT472
AOT472
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 75V 10A/140A TO220
BUK951R8-40EQ
BUK951R8-40EQ
NXP USA Inc.
MOSFET N-CH 40V TO220AB

Related Product By Brand

ESD3V3U1U-02LS
ESD3V3U1U-02LS
Infineon Technologies
TRANS VOLTAGE SUPPRESSOR DIODE
DZ600N12KHPSA1
DZ600N12KHPSA1
Infineon Technologies
DIODE GEN PURP 1.2KV 735A MODULE
D1800N46TVFXPSA1
D1800N46TVFXPSA1
Infineon Technologies
DIODE GEN PURP 4.6KV 1800A
BSS119 E6433
BSS119 E6433
Infineon Technologies
MOSFET N-CH 100V 170MA SOT23-3
IPB80N04S204ATMA1
IPB80N04S204ATMA1
Infineon Technologies
MOSFET N-CH 40V 80A TO263-3
IPD49CN10N G
IPD49CN10N G
Infineon Technologies
MOSFET N-CH 100V 20A TO252-3
FF450R12KE4HOSA1
FF450R12KE4HOSA1
Infineon Technologies
IGBT MOD 1200V 520A 2400W
IR2111PBF
IR2111PBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8DIP
TLE6282GXUMA1
TLE6282GXUMA1
Infineon Technologies
IC MOTOR DRIVER 7.5V-60V 20DSO
CY7C1514JV18-250BZXC
CY7C1514JV18-250BZXC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
S25FS128SAGBHV200
S25FS128SAGBHV200
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 24BGA
S29GL064S70TFA010
S29GL064S70TFA010
Infineon Technologies
IC FLASH 64MBIT PARALLEL 56TSOP