IPI029N06NAKSA1
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Infineon Technologies IPI029N06NAKSA1

Manufacturer No:
IPI029N06NAKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPI029N06NAKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 24A/100A TO262-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:2.8V @ 75µA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4100 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number IPI029N06NAKSA1 IPI020N06NAKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 24A (Ta), 100A (Tc) 29A (Ta), 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 2.9mOhm @ 100A, 10V 2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.8V @ 75µA 2.8V @ 143µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V 106 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 30 V 7800 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 3W (Ta), 136W (Tc) 3W (Ta), 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO262-3 PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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