IPI029N06NAKSA1
  • Share:

Infineon Technologies IPI029N06NAKSA1

Manufacturer No:
IPI029N06NAKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPI029N06NAKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 24A/100A TO262-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:2.8V @ 75µA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4100 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
0 Remaining View Similar

In Stock

$2.62
116

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPI029N06NAKSA1 IPI020N06NAKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 24A (Ta), 100A (Tc) 29A (Ta), 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 2.9mOhm @ 100A, 10V 2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.8V @ 75µA 2.8V @ 143µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V 106 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 30 V 7800 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 3W (Ta), 136W (Tc) 3W (Ta), 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO262-3 PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

RJK0374DSP-01#J0
RJK0374DSP-01#J0
Renesas Electronics America Inc
POWER TRANSISTOR, MOSFET
FCH20N60
FCH20N60
Fairchild Semiconductor
MOSFET N-CH 600V 20A TO247-3
DMP3056LDM-7
DMP3056LDM-7
Diodes Incorporated
MOSFET P-CH 30V 4.3A SOT-26
SIDR870ADP-T1-RE3
SIDR870ADP-T1-RE3
Vishay Siliconix
N-CHANNEL 100-V (D-S) MOSFET
SI2356DS-T1-BE3
SI2356DS-T1-BE3
Vishay Siliconix
N-CHANNEL 40-V (D-S) MOSFET
NTMJS0D8N04CLTWG
NTMJS0D8N04CLTWG
onsemi
MOSFET N-CH 40V 56A/368A 8LFPAK
IRFU9020
IRFU9020
Vishay Siliconix
MOSFET P-CH 50V 9.9A TO251AA
IPP04N03LA
IPP04N03LA
Infineon Technologies
MOSFET N-CH 25V 80A TO220-3
NTLUS3192PZTAG
NTLUS3192PZTAG
onsemi
MOSFET P-CH 20V 2.2A 6UDFN
MCH6342-TL-W
MCH6342-TL-W
onsemi
MOSFET P-CH 30V 4.5A MCPH6
STL11N6F7
STL11N6F7
STMicroelectronics
MOSFET N-CH 60V 11A POWERFLAT
IXTY1R4N60P TRL
IXTY1R4N60P TRL
IXYS
MOSFET N-CH 600V 1.4A TO252

Related Product By Brand

BB565H7908XTSA1
BB565H7908XTSA1
Infineon Technologies
DIODE VAR CAP 30V 20MA SCD80
IRLL014NTRPBF
IRLL014NTRPBF
Infineon Technologies
MOSFET N-CH 55V 2A SOT223
IPW60R105CFD7XKSA1
IPW60R105CFD7XKSA1
Infineon Technologies
MOSFET N-CH 600V 21A TO247-3
IRL3103LPBF
IRL3103LPBF
Infineon Technologies
MOSFET N-CH 30V 64A TO262
ICE3BR1765JXKLA1
ICE3BR1765JXKLA1
Infineon Technologies
IC OFFLINE SWITCH FLYBACK 8DIP
MOSFET1-KIT
MOSFET1-KIT
Infineon Technologies
20-100V FETS SOT23 10PC 18VALUES
MB90587CPMC-G-110-JNE1
MB90587CPMC-G-110-JNE1
Infineon Technologies
IC MCU 16BIT 64KB MROM 100LQFP
MB90F591APF-GE1
MB90F591APF-GE1
Infineon Technologies
IC MCU 16BIT 384KB FLASH 100QFP
S29GL01GT11DHAV23
S29GL01GT11DHAV23
Infineon Technologies
IC FLASH 1GBIT PARALLEL 64FBGA
CY7C1550KV18-400BZC
CY7C1550KV18-400BZC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
CY7C144E-15AXCT
CY7C144E-15AXCT
Infineon Technologies
IC SRAM 64KBIT PARALLEL 64TQFP
S34ML02G200BHI500
S34ML02G200BHI500
Infineon Technologies
IC FLASH 2GBIT PARALLEL 63BGA