IPI024N06N3GHKSA1
  • Share:

Infineon Technologies IPI024N06N3GHKSA1

Manufacturer No:
IPI024N06N3GHKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPI024N06N3GHKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 120A TO262-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 196µA
Gate Charge (Qg) (Max) @ Vgs:275 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:23000 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
0 Remaining View Similar

In Stock

-
264

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPI024N06N3GHKSA1 IPI024N06N3GXKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V 2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 196µA 4V @ 196µA
Gate Charge (Qg) (Max) @ Vgs 275 nC @ 10 V 275 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 23000 pF @ 30 V 23000 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 250W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO262-3 PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

IMW120R060M1HXKSA1
IMW120R060M1HXKSA1
Infineon Technologies
SICFET N-CH 1.2KV 36A TO247-3
NTB6N60
NTB6N60
onsemi
N-CHANNEL POWER MOSFET
STB75N06HDT4
STB75N06HDT4
onsemi
NFET D2PAK SPCL 60V TR
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
PMV90ENER
PMV90ENER
Nexperia USA Inc.
MOSFET N-CHANNEL 30V 3A TO236AB
BUK7Y3R0-40HX
BUK7Y3R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
FQP7N80C
FQP7N80C
onsemi
MOSFET N-CH 800V 6.6A TO220-3
SIS476DN-T1-GE3
SIS476DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 40A PPAK1212-8
DMP213DUFA-7B
DMP213DUFA-7B
Diodes Incorporated
MOSFET P-CH 25V 145MA 3DFN
AO4419_003
AO4419_003
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 9.7A 8SO
PHX9NQ20T,127
PHX9NQ20T,127
NXP USA Inc.
MOSFET N-CH 200V 5.2A TO220F
RF4E080GNTR
RF4E080GNTR
Rohm Semiconductor
MOSFET N-CH 30V 8A HUML2020L8

Related Product By Brand

REFAUDIODMA12070PTOBO1
REFAUDIODMA12070PTOBO1
Infineon Technologies
EVAL MA12070P CLASS D AMP
BSD223P L6327
BSD223P L6327
Infineon Technologies
MOSFET 2P-CH 20V 0.39A SOT363
IMBF170R450M1XTMA1
IMBF170R450M1XTMA1
Infineon Technologies
SICFET N-CH 1700V 9.8A TO263-7
BSP318S E6327
BSP318S E6327
Infineon Technologies
MOSFET N-CH 60V 2.6A SOT223-4
SAF-XC164CM-4F20FAA
SAF-XC164CM-4F20FAA
Infineon Technologies
IC MCU 16BIT 32KB FLASH 64TQFP
IR2214SS
IR2214SS
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 24SSOP
IR38365MTRPBFAUMA1
IR38365MTRPBFAUMA1
Infineon Technologies
IC REG 15A 34PQFN
MB90F548GPFV-G
MB90F548GPFV-G
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100LQFP
MB91F526JSCPMC-GSE1
MB91F526JSCPMC-GSE1
Infineon Technologies
IC MCU 32B 1.0625MB FLSH 120LQFP
MB90574CPMT-G-446E1
MB90574CPMT-G-446E1
Infineon Technologies
IC MCU 16BIT 256KB MROM 120LQFP
S25FL256SAGMFBG01
S25FL256SAGMFBG01
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 16SOIC
S29GL01GS11TFV020
S29GL01GS11TFV020
Infineon Technologies
IC FLASH 1GBIT PARALLEL 56TSOP