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| Part Number | IPI023NE7N3 G | IPI023NE7N3G |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Status | Obsolete | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75 V | 75 V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - | - |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 100A, 10V | 2.3mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 273µA | 3.8V @ 273µA |
| Gate Charge (Qg) (Max) @ Vgs | 206 nC @ 10 V | 206 nC @ 10 V |
| Vgs (Max) | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 14400 pF @ 37.5 V | 14400 pF @ 37.5 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 300W (Tc) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | PG-TO262-3 | PG-TO262-3 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
