IPG20N10S4L22ATMA1
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Infineon Technologies IPG20N10S4L22ATMA1

Manufacturer No:
IPG20N10S4L22ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPG20N10S4L22ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 8TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):100V
Current - Continuous Drain (Id) @ 25°C:20A
Rds On (Max) @ Id, Vgs:22mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:2.1V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1755pF @ 25V
Power - Max:60W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-4
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$1.87
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Similar Products

Part Number IPG20N10S4L22ATMA1 IPG20N10S4L22AATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 100V 100V
Current - Continuous Drain (Id) @ 25°C 20A 20A
Rds On (Max) @ Id, Vgs 22mOhm @ 17A, 10V 22mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.1V @ 25µA 2.1V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1755pF @ 25V 1755pF @ 25V
Power - Max 60W 60W
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN 8-PowerVDFN
Supplier Device Package PG-TDSON-8-4 PG-TDSON-8-10

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