Infineon Technologies-IPG20N10S436AATMA1 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	20A
Rds On (Max) @ Id, Vgs:	36mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 16µA
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	990pF @ 25V
Power - Max:	43W
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount, Wettable Flank
Package / Case:	8-PowerVDFN
Supplier Device Package:	PG-TDSON-8-10

Infineon Technologies IPG20N10S436AATMA1