IPG20N06S4L11AATMA1
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Infineon Technologies IPG20N06S4L11AATMA1

Manufacturer No:
IPG20N06S4L11AATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPG20N06S4L11AATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 8TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:20A
Rds On (Max) @ Id, Vgs:11.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:2.2V @ 28µA
Gate Charge (Qg) (Max) @ Vgs:53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:4020pF @ 25V
Power - Max:65W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-10
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$1.12
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Similar Products

Part Number IPG20N06S4L11AATMA1 IPG20N06S4L11ATMA1   IPG20N06S4L14AATMA1   IPG20N04S4L11AATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 60V 60V 60V 40V
Current - Continuous Drain (Id) @ 25°C 20A 20A 20A 20A
Rds On (Max) @ Id, Vgs 11.2mOhm @ 17A, 10V 11.2mOhm @ 17A, 10V 13.7mOhm @ 17A, 10V 11.6mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.2V @ 28µA 2.2V @ 28µA 2.2V @ 20µA 2.2V @ 15µA
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V 53nC @ 10V 39nC @ 10V 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4020pF @ 25V 4020pF @ 25V 2890pF @ 25V 1990pF @ 25V
Power - Max 65W 65W 50W 41W
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN
Supplier Device Package PG-TDSON-8-10 PG-TDSON-8-4 PG-TDSON-8-10 PG-TDSON-8-10

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