IPG20N06S4L11AATMA1
  • Share:

Infineon Technologies IPG20N06S4L11AATMA1

Manufacturer No:
IPG20N06S4L11AATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPG20N06S4L11AATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 8TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:20A
Rds On (Max) @ Id, Vgs:11.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:2.2V @ 28µA
Gate Charge (Qg) (Max) @ Vgs:53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:4020pF @ 25V
Power - Max:65W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-10
0 Remaining View Similar

In Stock

$1.12
317

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPG20N06S4L11AATMA1 IPG20N06S4L11ATMA1   IPG20N06S4L14AATMA1   IPG20N04S4L11AATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 60V 60V 60V 40V
Current - Continuous Drain (Id) @ 25°C 20A 20A 20A 20A
Rds On (Max) @ Id, Vgs 11.2mOhm @ 17A, 10V 11.2mOhm @ 17A, 10V 13.7mOhm @ 17A, 10V 11.6mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.2V @ 28µA 2.2V @ 28µA 2.2V @ 20µA 2.2V @ 15µA
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V 53nC @ 10V 39nC @ 10V 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4020pF @ 25V 4020pF @ 25V 2890pF @ 25V 1990pF @ 25V
Power - Max 65W 65W 50W 41W
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN
Supplier Device Package PG-TDSON-8-10 PG-TDSON-8-4 PG-TDSON-8-10 PG-TDSON-8-10

Related Product By Categories

PMGD280UN,115
PMGD280UN,115
Nexperia USA Inc.
MOSFET 2N-CH 20V 0.87A 6TSSOP
ALD1116PAL
ALD1116PAL
Advanced Linear Devices Inc.
MOSFET 2N-CH 10.6V 8DIP
NVMFD5C462NLWFT1G
NVMFD5C462NLWFT1G
onsemi
MOSFET 2N-CH 40V 84A S08FL
PJS6601_S2_00001
PJS6601_S2_00001
Panjit International Inc.
20V COMPLEMENTARY ENHANCEMENT MO
DMN2025UFDB-13
DMN2025UFDB-13
Diodes Incorporated
MOSFET BVDSS: 8V-24V U-DFN2020-6
ZXMP6A16DN8TC
ZXMP6A16DN8TC
Diodes Incorporated
MOSFET 2P-CH 60V 2.9A 8-SOIC
DMP58D0SV-7
DMP58D0SV-7
Diodes Incorporated
MOSFET 2P-CH 50V 0.16A SOT-563
SI4834BDY-T1-GE3
SI4834BDY-T1-GE3
Vishay Siliconix
MOSFET 2N-CH 30V 5.7A 8-SOIC
NTMD5836NLR2G
NTMD5836NLR2G
onsemi
MOSFET 2N-CH 40V 9A/5.7A SO-8FL
NTMFD4C88NT1G
NTMFD4C88NT1G
onsemi
MOSFET 2N-CH 30V 8DFN
VEC2616-TL-H-Z
VEC2616-TL-H-Z
onsemi
MOSFET N/P-CH 60V 3A/2.5A VEC8
SH8JC5TB1
SH8JC5TB1
Rohm Semiconductor
-60V DUAL PCH+PCH, SOP8, POWER M

Related Product By Brand

IDP30C65D2XKSA1
IDP30C65D2XKSA1
Infineon Technologies
DIODE 650V 30A RAPID2 TO220-3
BAS4002S-02LRHE6327
BAS4002S-02LRHE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
IDL08G65C5XUMA2
IDL08G65C5XUMA2
Infineon Technologies
DIODE SCHOTTKY 650V 8A VSON-4
IPP80N06S209AKSA2
IPP80N06S209AKSA2
Infineon Technologies
MOSFET N-CH 55V 80A TO220-3
IRF7413Z
IRF7413Z
Infineon Technologies
MOSFET N-CH 30V 13A 8SO
IRF9393PBF
IRF9393PBF
Infineon Technologies
MOSFET P-CH 30V 9.2A 8SO
AUIRFR4615
AUIRFR4615
Infineon Technologies
MOSFET N-CH 150V 33A DPAK
IRG4BC30W-STRL
IRG4BC30W-STRL
Infineon Technologies
IGBT 600V 23A 100W D2PAK
TLE4286GHTSA1
TLE4286GHTSA1
Infineon Technologies
IC REG LINEAR 5V 15MA SCT595-5
TLI4971A120T5UE0001XUMA1
TLI4971A120T5UE0001XUMA1
Infineon Technologies
POSITION&CURRENT SENSORS
SP30T-00E00-06B
SP30T-00E00-06B
Infineon Technologies
IC TIRE PRESSURE SENSOR DSOSP-14
CY9AF144NAPMC-G-JNE2
CY9AF144NAPMC-G-JNE2
Infineon Technologies
IC MCU 32BIT 288KB FLASH 100LQFP