Infineon Technologies-IPG20N06S3L-35 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	55V
Current - Continuous Drain (Id) @ 25°C:	20A
Rds On (Max) @ Id, Vgs:	35mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 15µA
Gate Charge (Qg) (Max) @ Vgs:	23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	1730pF @ 25V
Power - Max:	30W
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerVDFN
Supplier Device Package:	PG-TDSON-8-4

Infineon Technologies IPG20N06S3L-35