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IPG20N06S3L-35
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Infineon Technologies IPG20N06S3L-35

Manufacturer No:
IPG20N06S3L-35
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPG20N06S3L-35 Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 55V 20A TDSON-8
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):55V
Current - Continuous Drain (Id) @ 25°C:20A
Rds On (Max) @ Id, Vgs:35mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:2.2V @ 15µA
Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1730pF @ 25V
Power - Max:30W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-4
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In Stock

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210

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