IPG20N06S2L65AATMA1
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Infineon Technologies IPG20N06S2L65AATMA1

Manufacturer No:
IPG20N06S2L65AATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPG20N06S2L65AATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 55V 20A 8TDSON
Delivery:
Payment:
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Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):55V
Current - Continuous Drain (Id) @ 25°C:20A
Rds On (Max) @ Id, Vgs:65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2V @ 14µA
Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:410pF @ 25V
Power - Max:43W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-10
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In Stock

$1.11
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Similar Products

Part Number IPG20N06S2L65AATMA1 IPG20N06S2L65ATMA1   IPG20N06S2L35AATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 55V 55V 55V
Current - Continuous Drain (Id) @ 25°C 20A 20A 20A (Tc)
Rds On (Max) @ Id, Vgs 65mOhm @ 15A, 10V 65mOhm @ 15A, 10V 35mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 14µA 2V @ 14µA 2V @ 27µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V 12nC @ 10V 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 410pF @ 25V 410pF @ 25V 790pF @ 25V
Power - Max 43W 43W 65W
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN
Supplier Device Package PG-TDSON-8-10 PG-TDSON-8-4 PG-TDSON-8-10

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