IPG20N04S4L11AATMA1
  • Share:

Infineon Technologies IPG20N04S4L11AATMA1

Manufacturer No:
IPG20N04S4L11AATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPG20N04S4L11AATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 40V 20A 8TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:20A
Rds On (Max) @ Id, Vgs:11.6mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:2.2V @ 15µA
Gate Charge (Qg) (Max) @ Vgs:26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1990pF @ 25V
Power - Max:41W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-10
0 Remaining View Similar

In Stock

$1.26
428

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPG20N04S4L11AATMA1 IPG20N04S4L11ATMA1   IPG20N06S4L11AATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 40V 40V 60V
Current - Continuous Drain (Id) @ 25°C 20A 20A 20A
Rds On (Max) @ Id, Vgs 11.6mOhm @ 17A, 10V 11.6mOhm @ 17A, 10V 11.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.2V @ 15µA 2.2V @ 15µA 2.2V @ 28µA
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V 26nC @ 10V 53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1990pF @ 25V 1990pF @ 25V 4020pF @ 25V
Power - Max 41W 41W 65W
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN
Supplier Device Package PG-TDSON-8-10 PG-TDSON-8-4 PG-TDSON-8-10

Related Product By Categories

SQJ500AEP-T1_GE3
SQJ500AEP-T1_GE3
Vishay Siliconix
MOSFET N/P CHAN 40V SO8L DUAL
BSD223PH6327XTSA1
BSD223PH6327XTSA1
Infineon Technologies
MOSFET 2P-CH 20V 0.39A SOT363
SI4931DY-T1-E3
SI4931DY-T1-E3
Vishay Siliconix
MOSFET 2P-CH 12V 6.7A 8-SOIC
DMC3061SVTQ-7
DMC3061SVTQ-7
Diodes Incorporated
MOSFET BVDSS: 25V~30V TSOT26 T&R
PJQ5848-AU_R2_000A1
PJQ5848-AU_R2_000A1
Panjit International Inc.
40V DUAL N-CHANNEL ENHANCEMENT M
ALD210808SCL
ALD210808SCL
Advanced Linear Devices Inc.
MOSFET 4N-CH 10.6V 0.08A 16SOIC
IRF9910
IRF9910
Infineon Technologies
MOSFET 2N-CH 20V 10A 8-SOIC
STS9D8NH3LL
STS9D8NH3LL
STMicroelectronics
MOSFET 2N-CH 30V 8A/9A 8SOIC
SI4908DY-T1-E3
SI4908DY-T1-E3
Vishay Siliconix
MOSFET 2N-CH 40V 5A 8-SOIC
ZXMD63P03XTA
ZXMD63P03XTA
Diodes Incorporated
MOSFET 2P-CH 30V 8-MSOP
SP8M10FRATB
SP8M10FRATB
Rohm Semiconductor
4V DRIVE NCH+PCH MOSFET (AEC-Q10
SP8J1TB
SP8J1TB
Rohm Semiconductor
MOSFET 2P-CH 30V 5A 8-SOIC

Related Product By Brand

TD330N16KOFTIMHPSA1
TD330N16KOFTIMHPSA1
Infineon Technologies
SCR MODULE 1600V 520A MODULE
BSZ0909NDXTMA1
BSZ0909NDXTMA1
Infineon Technologies
MOSFET 2N-CH 30V 20A WISON-8
64-0007
64-0007
Infineon Technologies
MOSFET N-CH 200V 18A TO220AB
IGW40N60H3FKSA1
IGW40N60H3FKSA1
Infineon Technologies
IGBT 600V 80A 306W TO247-3
TC275T64F200WCAKXUMA1
TC275T64F200WCAKXUMA1
Infineon Technologies
IC MCU 32BIT 4MB FLASH 176LQFP
XC8662FRA5VBEAXUMA1
XC8662FRA5VBEAXUMA1
Infineon Technologies
IC MCU 8BIT 8KB FLASH 38TSSOP
SAK-TC297TA-128F300N BC
SAK-TC297TA-128F300N BC
Infineon Technologies
IC MCU 32BIT 8MB FLASH 292LFBGA
IR3565BMTR1PBF
IR3565BMTR1PBF
Infineon Technologies
IC REG CTRLR INTEL 2OUT 48QFN
MB90387SPMT-G-383SN-YE1
MB90387SPMT-G-383SN-YE1
Infineon Technologies
IC MCU 16BIT 64KB MROM 48LQFP
CY62146GN30-45BVXI
CY62146GN30-45BVXI
Infineon Technologies
IC SRAM 4MBIT PARALLEL 48VFBGA
CY7C1426AV18-250BZXC
CY7C1426AV18-250BZXC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA
S29GL064S90TFI010
S29GL064S90TFI010
Infineon Technologies
IC FLASH 64MBIT PARALLEL 56TSOP