IPG20N04S4L07AATMA1
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Infineon Technologies IPG20N04S4L07AATMA1

Manufacturer No:
IPG20N04S4L07AATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPG20N04S4L07AATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 8TDSON
Delivery:
Payment:
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Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:20A
Rds On (Max) @ Id, Vgs:7.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs:50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:3980pF @ 25V
Power - Max:65W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-10
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In Stock

$1.88
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Similar Products

Part Number IPG20N04S4L07AATMA1 IPG20N04S4L07ATMA1   IPG20N04S4L08AATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 40V 40V 40V
Current - Continuous Drain (Id) @ 25°C 20A 20A 20A
Rds On (Max) @ Id, Vgs 7.2mOhm @ 17A, 10V 7.2mOhm @ 17A, 10V 8.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.2V @ 30µA 2.2V @ 30µA 2.2V @ 22µA
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V 50nC @ 10V 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 25V 3980pF @ 25V 3050pF @ 25V
Power - Max 65W 65W 54W
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN
Supplier Device Package PG-TDSON-8-10 PG-TDSON-8-4 PG-TDSON-8-10

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