IPG16N10S461AATMA1
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Infineon Technologies IPG16N10S461AATMA1

Manufacturer No:
IPG16N10S461AATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPG16N10S461AATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 100V 16A 8TDSON
Delivery:
Payment:
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Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):100V
Current - Continuous Drain (Id) @ 25°C:16A
Rds On (Max) @ Id, Vgs:61mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:3.5V @ 9µA
Gate Charge (Qg) (Max) @ Vgs:7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:490pF @ 25V
Power - Max:29W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-10
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$0.62
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Similar Products

Part Number IPG16N10S461AATMA1 IPG16N10S461ATMA1   IPG16N10S4L61AATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Standard Logic Level Gate
Drain to Source Voltage (Vdss) 100V 100V 100V
Current - Continuous Drain (Id) @ 25°C 16A 16A 16A
Rds On (Max) @ Id, Vgs 61mOhm @ 16A, 10V 61mOhm @ 16A, 10V 61mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 3.5V @ 9µA 3.5V @ 9µA 2.1V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V 7nC @ 10V 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V 490pF @ 25V 845pF @ 25V
Power - Max 29W 29W 29W
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN
Supplier Device Package PG-TDSON-8-10 PG-TDSON-8-4 PG-TDSON-8-10

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