IPDD60R050G7XTMA1
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Infineon Technologies IPDD60R050G7XTMA1

Manufacturer No:
IPDD60R050G7XTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPDD60R050G7XTMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 47A HDSOP-10
Delivery:
Payment:
iso14001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:47A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:50mOhm @ 15.9A, 10V
Vgs(th) (Max) @ Id:4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs:68 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2670 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):278W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HDSOP-10-1
Package / Case:10-PowerSOP Module
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$13.97
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Similar Products

Part Number IPDD60R050G7XTMA1 IPDD60R150G7XTMA1   IPDD60R080G7XTMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 47A (Tc) 16A (Tc) 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 15.9A, 10V 150mOhm @ 5.3A, 10V 80mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id 4V @ 800µA 4V @ 260µA 4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V 23 nC @ 10 V 42 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2670 pF @ 400 V 902 pF @ 400 V 1640 pF @ 400 V
FET Feature - - -
Power Dissipation (Max) 278W (Tc) 95W (Tc) 174W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-HDSOP-10-1 PG-HDSOP-10-1 PG-HDSOP-10-1
Package / Case 10-PowerSOP Module 10-PowerSOP Module 10-PowerSOP Module

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