IPD90R1K2C3ATMA2
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Infineon Technologies IPD90R1K2C3ATMA2

Manufacturer No:
IPD90R1K2C3ATMA2
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD90R1K2C3ATMA2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 900V 2.1A TO252-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id:3.5V @ 0.31mA
Gate Charge (Qg) (Max) @ Vgs:3.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:710 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IPD90R1K2C3ATMA2 IPD90R1K2C3ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V
Current - Continuous Drain (Id) @ 25°C 5.1A (Tc) 5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.8A, 10V 1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 0.31mA 3.5V @ 310µA
Gate Charge (Qg) (Max) @ Vgs 3.2 nC @ 10 V 28 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 710 pF @ 100 V 710 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 83W (Tc) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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