Infineon Technologies-IPD90N06S4L-05 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	4.6mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 60µA
Gate Charge (Qg) (Max) @ Vgs:	110 nC @ 10 V
Vgs (Max):	±16V
Input Capacitance (Ciss) (Max) @ Vds:	8180 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	107W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO252-3-11
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

Infineon Technologies IPD90N06S4L-05