IPD90N04S4L04ATMA1
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Infineon Technologies IPD90N04S4L04ATMA1

Manufacturer No:
IPD90N04S4L04ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD90N04S4L04ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 90A TO252-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.8mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:2.2V @ 35µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:4690 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-313
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IPD90N04S4L04ATMA1 IPD90N04S404ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 90A, 10V 4.1mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 2.2V @ 35µA 4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 43 nC @ 10 V
Vgs (Max) +20V, -16V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4690 pF @ 25 V 3440 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 71W (Tc) 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-313 PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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