IPD90N04S4L04ATMA1
  • Share:

Infineon Technologies IPD90N04S4L04ATMA1

Manufacturer No:
IPD90N04S4L04ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD90N04S4L04ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 90A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.8mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:2.2V @ 35µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:4690 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-313
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.51
96

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPD90N04S4L04ATMA1 IPD90N04S404ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 90A, 10V 4.1mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 2.2V @ 35µA 4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 43 nC @ 10 V
Vgs (Max) +20V, -16V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4690 pF @ 25 V 3440 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 71W (Tc) 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-313 PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

EPC2012C
EPC2012C
EPC
GANFET N-CH 200V 5A DIE OUTLINE
BUK7Y9R9-80EX
BUK7Y9R9-80EX
Nexperia USA Inc.
MOSFET N-CH 80V 89A LFPAK56
SI1401EDH-T1-GE3
SI1401EDH-T1-GE3
Vishay Siliconix
MOSFET P-CH 12V 4A SC70-6
PJL9417_R2_00001
PJL9417_R2_00001
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
IPI052NE7N3G
IPI052NE7N3G
Infineon Technologies
N-CHANNEL POWER MOSFET
SIHH11N65E-T1-GE3
SIHH11N65E-T1-GE3
Vishay Siliconix
MOSFET N-CH 650V 12A PPAK 8 X 8
IRLR110TRL
IRLR110TRL
Vishay Siliconix
MOSFET N-CH 100V 4.3A DPAK
IRF3711S
IRF3711S
Infineon Technologies
MOSFET N-CH 20V 110A D2PAK
IRFS38N20DTRRP
IRFS38N20DTRRP
Infineon Technologies
MOSFET N-CH 200V 43A D2PAK
IRFS4615PBF
IRFS4615PBF
Infineon Technologies
MOSFET N-CH 150V 33A D2PAK
SIR412DP-T1-GE3
SIR412DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 25V 20A PPAK SO-8
APT28F60S
APT28F60S
Microsemi Corporation
MOSFET N-CH 600V 30A D3PAK

Related Product By Brand

KITA2GTC3973V3TFTTOBO1
KITA2GTC3973V3TFTTOBO1
Infineon Technologies
KIT_A2G_TC397_3V3_TFT
BA595E6359HTMA1
BA595E6359HTMA1
Infineon Technologies
RF DIODE PIN 50V SC79-2
BAV 99 B6327
BAV 99 B6327
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
IPA60R160P6XKSA1
IPA60R160P6XKSA1
Infineon Technologies
MOSFET N-CH 600V 23.8A TO220-FP
BSZ011NE2LS5IATMA1
BSZ011NE2LS5IATMA1
Infineon Technologies
MOSFET N-CH 25V 35A/40A TSDSON
TLF35584QVVS1XUMA2
TLF35584QVVS1XUMA2
Infineon Technologies
IC REG AUTO APPL 1OUT VQFN-48-31
MB90587CPF-GS-156-BND
MB90587CPF-GS-156-BND
Infineon Technologies
IC MCU 16BIT 64KB MROM 100QFP
MB90922NCSPMC-GS-245E1
MB90922NCSPMC-GS-245E1
Infineon Technologies
IC MCU 16BIT 256KB MROM 120LQFP
CY7C1061GE30-10ZXI
CY7C1061GE30-10ZXI
Infineon Technologies
IC SRAM 16MBIT PARALLEL 48TSOP I
S25FL128SAGBHI203
S25FL128SAGBHI203
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 24BGA
CY7C1370S-167AXI
CY7C1370S-167AXI
Infineon Technologies
IC SRAM 18MBIT PARALLEL 100TQFP
CY14E256LA-SZ25XI
CY14E256LA-SZ25XI
Infineon Technologies
IC NVSRAM 256KBIT PAR 32SOIC