IPD90N04S404ATMA1
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Infineon Technologies IPD90N04S404ATMA1

Manufacturer No:
IPD90N04S404ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD90N04S404ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 90A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.1mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3440 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-313
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IPD90N04S404ATMA1 IPD90N04S405ATMA1   IPD90N04S4L04ATMA1   IPD90N06S404ATMA1   IPD90N04S304ATMA1   IPD90N04S40-4ATMA1   IPD90N04S402ATMA1   IPD90N04S403ATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Discontinued at Digi-Key Not For New Designs Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 60 V 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 86A (Tc) 90A (Tc) 90A (Tc) 90A (Tc) 90A (Tc) 90A (Tc) 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 4.5V, 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.1mOhm @ 90A, 10V 5.2mOhm @ 86A, 10V 3.8mOhm @ 90A, 10V 3.8mOhm @ 90A, 10V 3.6mOhm @ 80A, 10V 4.1mOhm @ 90A, 10V 2.4mOhm @ 90A, 10V 3.2mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 35.2mA 4V @ 30µA 2.2V @ 35µA 4V @ 90µA 4V @ 90µA 4V @ 35.2mA 4V @ 95µA 4V @ 53µA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V 37 nC @ 10 V 60 nC @ 10 V 128 nC @ 10 V 80 nC @ 10 V 43 nC @ 10 V 118 nC @ 10 V 66.8 nC @ 10 V
Vgs (Max) ±20V ±20V +20V, -16V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3440 pF @ 25 V 2960 pF @ 25 V 4690 pF @ 25 V 10400 pF @ 25 V 5200 pF @ 25 V 3440 pF @ 25 V 9430 pF @ 25 V 5260 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 71W (Tc) 65W (Tc) 71W (Tc) 150W (Tc) 136W (Tc) 71W (Tc) 150W (Tc) 94W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-313 PG-TO252-3-313 PG-TO252-3-313 PG-TO252-3-11 PG-TO252-3-11 PG-TO252-3-313 PG-TO252-3-313 PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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