IPD90N04S404ATMA1
  • Share:

Infineon Technologies IPD90N04S404ATMA1

Manufacturer No:
IPD90N04S404ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD90N04S404ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 90A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.1mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3440 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-313
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.50
178

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPD90N04S404ATMA1 IPD90N04S405ATMA1   IPD90N04S4L04ATMA1   IPD90N06S404ATMA1   IPD90N04S304ATMA1   IPD90N04S40-4ATMA1   IPD90N04S402ATMA1   IPD90N04S403ATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Discontinued at Digi-Key Not For New Designs Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 60 V 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 86A (Tc) 90A (Tc) 90A (Tc) 90A (Tc) 90A (Tc) 90A (Tc) 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 4.5V, 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.1mOhm @ 90A, 10V 5.2mOhm @ 86A, 10V 3.8mOhm @ 90A, 10V 3.8mOhm @ 90A, 10V 3.6mOhm @ 80A, 10V 4.1mOhm @ 90A, 10V 2.4mOhm @ 90A, 10V 3.2mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 35.2mA 4V @ 30µA 2.2V @ 35µA 4V @ 90µA 4V @ 90µA 4V @ 35.2mA 4V @ 95µA 4V @ 53µA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V 37 nC @ 10 V 60 nC @ 10 V 128 nC @ 10 V 80 nC @ 10 V 43 nC @ 10 V 118 nC @ 10 V 66.8 nC @ 10 V
Vgs (Max) ±20V ±20V +20V, -16V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3440 pF @ 25 V 2960 pF @ 25 V 4690 pF @ 25 V 10400 pF @ 25 V 5200 pF @ 25 V 3440 pF @ 25 V 9430 pF @ 25 V 5260 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 71W (Tc) 65W (Tc) 71W (Tc) 150W (Tc) 136W (Tc) 71W (Tc) 150W (Tc) 94W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-313 PG-TO252-3-313 PG-TO252-3-313 PG-TO252-3-11 PG-TO252-3-11 PG-TO252-3-313 PG-TO252-3-313 PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

SI2319CDS-T1-GE3
SI2319CDS-T1-GE3
Vishay Siliconix
MOSFET P-CH 40V 4.4A SOT23-3
SSM6K819R,LXHF
SSM6K819R,LXHF
Toshiba Semiconductor and Storage
AUTO AEC-Q SS MOS N-CH LOGIC-LEV
SI7430DP-T1-E3
SI7430DP-T1-E3
Vishay Siliconix
MOSFET N-CH 150V 26A PPAK SO-8
STF21N65M5
STF21N65M5
STMicroelectronics
MOSFET N-CH 650V 17A TO220FP
RQJ0201UGDQA#H1
RQJ0201UGDQA#H1
Renesas Electronics America Inc
P-CHANNEL MOSFET
AUIRFR5305
AUIRFR5305
Infineon Technologies
MOSFET P-CH 55V 31A DPAK
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
BUK9606-40B,118
BUK9606-40B,118
Nexperia USA Inc.
MOSFET N-CH 40V 75A D2PAK
SI3493DV-T1-E3
SI3493DV-T1-E3
Vishay Siliconix
MOSFET P-CH 20V 5.3A 6TSOP
STF12NM65
STF12NM65
STMicroelectronics
MOSFET N-CH 650V TO220FP
NVMFS5885NLWFT1G
NVMFS5885NLWFT1G
onsemi
MOSFET N-CH 60V 10.2A 5DFN
IRFI7446GPBF
IRFI7446GPBF
Infineon Technologies
MOSFET N-CH 40V 80A TO220AB FP

Related Product By Brand

ESD101B102ELSE6327XTSA1
ESD101B102ELSE6327XTSA1
Infineon Technologies
TVS DIODE 5.5VWM 30VC TSSLP-2-4
IRDC3898
IRDC3898
Infineon Technologies
BOARD EVAL SUPIRBUCK IR3898
IDP20E65D2XKSA1
IDP20E65D2XKSA1
Infineon Technologies
DIODE GEN PURP 650V 40A TO220-2
IRSM515-035PATR
IRSM515-035PATR
Infineon Technologies
MICRO MCM
BCR400WE6327BTSA1
BCR400WE6327BTSA1
Infineon Technologies
IC ACTIVE BIAS CONTROLLER SOT343
MB90F347ESPMC-GS9013SPE1
MB90F347ESPMC-GS9013SPE1
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100LQFP
CY7C1414KV18-333BZC
CY7C1414KV18-333BZC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA
CY7C1472BV25-200AXCT
CY7C1472BV25-200AXCT
Infineon Technologies
IC SRAM 72MBIT PARALLEL 100TQFP
CY7C1370D-200BZI
CY7C1370D-200BZI
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA
CYDC128B08-55AXI
CYDC128B08-55AXI
Infineon Technologies
IC SRAM 128KBIT PARALLEL 100TQFP
CY7C1034DV33-10BGXIT
CY7C1034DV33-10BGXIT
Infineon Technologies
IC SRAM 6MBIT PARALLEL 119PBGA
S29PL127J70TFI130H
S29PL127J70TFI130H
Infineon Technologies
IC FLASH 128MBIT PARALLEL 56TSOP