IPD90N04S40-4ATMA1
  • Share:

Infineon Technologies IPD90N04S40-4ATMA1

Manufacturer No:
IPD90N04S40-4ATMA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPD90N04S40-4ATMA1 Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.1mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3440 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-313
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
22

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPD90N04S40-4ATMA1 IPD90N04S404ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 4.1mOhm @ 90A, 10V 4.1mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 35.2mA 4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V 43 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3440 pF @ 25 V 3440 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 71W (Tc) 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-313 PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

RFD7N10LE
RFD7N10LE
Harris Corporation
N-CHANNEL POWER MOSFET
TK33S10N1Z,LQ
TK33S10N1Z,LQ
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 33A DPAK
IPA032N06N3GXKSA1
IPA032N06N3GXKSA1
Infineon Technologies
MOSFET N-CH 60V 84A TO220-3-31
SPA08N50C3XKAS1
SPA08N50C3XKAS1
Infineon Technologies
N-CHANNEL POWER MOSFET
NP89N055PUK-E1-AY
NP89N055PUK-E1-AY
Renesas Electronics America Inc
MOSFET N-CH 55V 90A TO263-3
NTB75N06LT4
NTB75N06LT4
onsemi
MOSFET N-CH 60V 75A D2PAK
BSP295L6327HTSA1
BSP295L6327HTSA1
Infineon Technologies
MOSFET N-CH 60V 1.8A SOT223-4
IPP80N04S2L03AKSA1
IPP80N04S2L03AKSA1
Infineon Technologies
MOSFET N-CH 40V 80A TO220-3
NTB6411ANT4G
NTB6411ANT4G
onsemi
MOSFET N-CH 100V 77A D2PAK
SUD50P08-26-E3
SUD50P08-26-E3
Vishay Siliconix
MOSFET P-CH 80V 50A TO252
SCH1332-TL-H
SCH1332-TL-H
onsemi
MOSFET P-CH 20V 2.5A 6SCH
BUK9620-55A,118
BUK9620-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 54A D2PAK

Related Product By Brand

IPB037N06N3GATMA1
IPB037N06N3GATMA1
Infineon Technologies
MOSFET N-CH 60V 90A D2PAK
BSZ088N03MSG
BSZ088N03MSG
Infineon Technologies
BSZ088N03 - 12V-300V N-CHANNEL P
IRL1104PBF
IRL1104PBF
Infineon Technologies
MOSFET N-CH 40V 104A TO220AB
IR2277STRPBF
IR2277STRPBF
Infineon Technologies
IC CURRENT SENSE 0.2& 16SOIC
MB90594GHZPFR-GS-190-ER
MB90594GHZPFR-GS-190-ER
Infineon Technologies
IC MCU 16BIT 256KB MROM 100QFP
MB90428GCPFV-GS-219
MB90428GCPFV-GS-219
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
CY8C22113-24SI
CY8C22113-24SI
Infineon Technologies
IC MCU 8BIT 2KB FLASH 8SOIC
CY9BF166NBGL-GE1
CY9BF166NBGL-GE1
Infineon Technologies
IC MCU 32BIT 544KB FLASH 112FBGA
CY91F587LAPMC-GTE1
CY91F587LAPMC-GTE1
Infineon Technologies
IC MCU 32B 1.0625MB FLSH 144LQFP
CY9BF468MPMC-G-MNE2
CY9BF468MPMC-G-MNE2
Infineon Technologies
IC MM MCU 80LQFP
S29GL064S90DHVV10
S29GL064S90DHVV10
Infineon Technologies
IC FLASH 64MBIT PARALLEL 64FBGA
STK14D88-NF25ITR
STK14D88-NF25ITR
Infineon Technologies
IC NVSRAM 256KBIT PAR 32SOIC