IPD85P04P4L06ATMA2
  • Share:

Infineon Technologies IPD85P04P4L06ATMA2

Manufacturer No:
IPD85P04P4L06ATMA2
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD85P04P4L06ATMA2 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 40V 85A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:85A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.4mOhm @ 85A, 10V
Vgs(th) (Max) @ Id:2.2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:104 nC @ 10 V
Vgs (Max):+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds:6580 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):88W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-313
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$2.15
112

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPD85P04P4L06ATMA2 IPD85P04P4L06ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Not For New Designs
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 85A (Tc) 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.4mOhm @ 85A, 10V 6.4mOhm @ 85A, 10V
Vgs(th) (Max) @ Id 2.2V @ 150µA 2.2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 104 nC @ 10 V 104 nC @ 10 V
Vgs (Max) +5V, -16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 6580 pF @ 25 V 6580 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 88W (Tc) 88W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-313 PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

IRF840LCPBF
IRF840LCPBF
Vishay Siliconix
MOSFET N-CH 500V 8A TO220AB
PHB29N08T,118
PHB29N08T,118
NXP Semiconductors
NEXPERIA PHB29N08T - 27A, 75V, 0
TK39N60W5,S1VF
TK39N60W5,S1VF
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 38.8A TO247
IPB180N04S401ATMA1
IPB180N04S401ATMA1
Infineon Technologies
MOSFET N-CH 40V 180A TO263-7
SIHF9630STRL-GE3
SIHF9630STRL-GE3
Vishay Siliconix
MOSFET P-CH 200V 6.5A D2PAK
FDPF035N06B_F152
FDPF035N06B_F152
Fairchild Semiconductor
MOSFET N-CH 60V 88A TO220F-3
IPP80N06S205AKSA1
IPP80N06S205AKSA1
Infineon Technologies
MOSFET N-CH 55V 80A TO220-3
NTD6416ANL-1G
NTD6416ANL-1G
onsemi
MOSFET N-CH 100V 19A IPAK
RJK5030DPD-00#J2
RJK5030DPD-00#J2
Renesas Electronics America Inc
MOSFET N-CH 500V 5A MP3A
PMR290UNE,115
PMR290UNE,115
NXP USA Inc.
MOSFET N-CH 20V 700MA SC75
IPD50N06S4L12ATMA1
IPD50N06S4L12ATMA1
Infineon Technologies
MOSFET N-CH 60V 50A TO252-3-11
TSM2NB60CH C5G
TSM2NB60CH C5G
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 600V 2A TO251

Related Product By Brand

ESD253B1W0201E6327XTSA1
ESD253B1W0201E6327XTSA1
Infineon Technologies
TVS DIODE 24VWM 30VC WLL-2-3
BAS70-04WE6327
BAS70-04WE6327
Infineon Technologies
SCHOTTKY DIODE
IDV15E65D2XKSA1
IDV15E65D2XKSA1
Infineon Technologies
DIODE GEN PURP 650V 15A TO220-2
FF2MR12KM1PHOSA1
FF2MR12KM1PHOSA1
Infineon Technologies
MEDIUM POWER 62MM
IRFS7534TRLPBF
IRFS7534TRLPBF
Infineon Technologies
MOSFET N CH 60V 195A D2PAK
FD1000R17IE4BOSA2
FD1000R17IE4BOSA2
Infineon Technologies
IGBT MODULE 1700V 6250W
CY8C20224-12LKXI
CY8C20224-12LKXI
Infineon Technologies
IC MCU 8BIT 8KB FLASH 16QFN
MB90347APFV-G-110-BNDE1
MB90347APFV-G-110-BNDE1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
MB90347APFV-GS-268E1
MB90347APFV-GS-268E1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
STK14D88-RF45TR
STK14D88-RF45TR
Infineon Technologies
IC NVSRAM 256KBIT PAR 48SSOP
CY7C1512UV18-267BZI
CY7C1512UV18-267BZI
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
CY7C1418UV18-250BZXC
CY7C1418UV18-250BZXC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA