IPD80R750P7ATMA1
  • Share:

Infineon Technologies IPD80R750P7ATMA1

Manufacturer No:
IPD80R750P7ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD80R750P7ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 7A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:750mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id:3.5V @ 140µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:460 pF @ 500 V
FET Feature:- 
Power Dissipation (Max):51W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.88
251

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPD80R750P7ATMA1 IPD80R450P7ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 750mOhm @ 2.7A, 10V 450mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 140µA 3.5V @ 220µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 24 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 460 pF @ 500 V 770 pF @ 500 V
FET Feature - Super Junction
Power Dissipation (Max) 51W (Tc) 73W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-2
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

IXFH46N65X2
IXFH46N65X2
IXYS
MOSFET N-CH 650V 46A TO247
FJ4B01120L1
FJ4B01120L1
Panasonic Electronic Components
MOSFET P-CH 12V 2.6A ULGA004
FDV303N
FDV303N
onsemi
MOSFET N-CH 25V 680MA SOT23
IPB60R040CFD7ATMA1
IPB60R040CFD7ATMA1
Infineon Technologies
MOSFET N-CH 650V 50A TO263-3-2
FQP11N40C
FQP11N40C
onsemi
MOSFET N-CH 400V 10.5A TO220-3
IPC100N04S5L1R5ATMA1
IPC100N04S5L1R5ATMA1
Infineon Technologies
MOSFET N-CH 40V 100A 8TDSON-34
TSM3481CX6 RFG
TSM3481CX6 RFG
Taiwan Semiconductor Corporation
MOSFET P-CHANNEL 30V 5.7A SOT26
IXTQ48N20T
IXTQ48N20T
IXYS
MOSFET N-CH 200V 48A TO3P
APTM100UM65SAG
APTM100UM65SAG
Microchip Technology
MOSFET N-CH 1000V 145A SP6
IRF730ASTRR
IRF730ASTRR
Vishay Siliconix
MOSFET N-CH 400V 5.5A D2PAK
APT34F60BG
APT34F60BG
Microsemi Corporation
MOSFET N-CH 600V 34A TO247-3
FDC637AN-NB5E023A
FDC637AN-NB5E023A
onsemi
N-CHANNEL POWERTRENCH MOSFET, 2.

Related Product By Brand

BAV70SH6327XTSA1
BAV70SH6327XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
DD260N18KHPSA1
DD260N18KHPSA1
Infineon Technologies
DIODE MODULE GP 1800V 260A
IPD60R180P7SE8228AUMA1
IPD60R180P7SE8228AUMA1
Infineon Technologies
MOSFET N-CH 600V 18A TO252-3
SPU01N60C3BKMA1
SPU01N60C3BKMA1
Infineon Technologies
MOSFET N-CH 650V 800MA TO251-3
IPB80N06S205ATMA1
IPB80N06S205ATMA1
Infineon Technologies
MOSFET N-CH 55V 80A TO263-3
CY22381SXI-185T
CY22381SXI-185T
Infineon Technologies
IC CLOCK GENERATOR
CY8C28452-24PVXI
CY8C28452-24PVXI
Infineon Technologies
IC MCU 8BIT 16KB FLASH 28SSOP
MB91F467DAPFVS-GS-N2K5E2
MB91F467DAPFVS-GS-N2K5E2
Infineon Technologies
IC MCU 32B 1.0625MB FLASH 208QFP
CY96F348HSBPQCR-GSE2
CY96F348HSBPQCR-GSE2
Infineon Technologies
IC MCU 16BIT 576KB FLASH 100QFP
CY7C4225-15AC
CY7C4225-15AC
Infineon Technologies
IC SYNC FIFO MEM 1KX18 64LQFP
S25FL256SAGBHVC00
S25FL256SAGBHVC00
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 24BGA
CY7C1470BV33-200BZC
CY7C1470BV33-200BZC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA