IPD80R2K8CEBTMA1
  • Share:

Infineon Technologies IPD80R2K8CEBTMA1

Manufacturer No:
IPD80R2K8CEBTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD80R2K8CEBTMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 1.9A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.8Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id:3.9V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:290 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):42W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
309

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPD80R2K8CEBTMA1 IPD80R2K8CEATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 1.9A (Tc) 1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.8Ohm @ 1.1A, 10V 2.8Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 120µA 3.9V @ 120µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 100 V 290 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 42W (Tc) 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-11 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

FDU8586
FDU8586
Fairchild Semiconductor
MOSFET N-CH 20V 35A IPAK
2SK3109-AZ
2SK3109-AZ
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
NTBLS0D7N06C
NTBLS0D7N06C
onsemi
MOSFET N-CH 60V 54A/470A 8HPSOF
FDV305N
FDV305N
onsemi
MOSFET N-CH 20V 900MA SOT23
SIR186LDP-T1-RE3
SIR186LDP-T1-RE3
Vishay Siliconix
N-CHANNEL 60-V (D-S) MOSFET POWE
PSMN6R1-25MLDX
PSMN6R1-25MLDX
Nexperia USA Inc.
MOSFET N-CH 25V 60A LFPAK33
BSZ065N06LS5ATMA1
BSZ065N06LS5ATMA1
Infineon Technologies
MOSFET N-CH 60V 40A TSDSON
SIHF8N50D-E3
SIHF8N50D-E3
Vishay Siliconix
MOSFET N-CH 500V 8.7A TO220
IPP60R099P6XKSA1
IPP60R099P6XKSA1
Infineon Technologies
MOSFET N-CH 600V 37.9A TO220-3
SQJA72EP-T1_BE3
SQJA72EP-T1_BE3
Vishay Siliconix
N-CHANNEL 100-V (D-S) 175C MOSFE
STL18N60M2
STL18N60M2
STMicroelectronics
MOSFET N-CH 600V 9A POWERFLAT HV
NTP4813NLG
NTP4813NLG
onsemi
MOSFET N-CH 30V 10.2A TO220AB

Related Product By Brand

BGF121E6329XTSA1
BGF121E6329XTSA1
Infineon Technologies
TVS DIODE 10VWM 20VC WLP-4-1
TLE5014PROGKITTOBO1
TLE5014PROGKITTOBO1
Infineon Technologies
EVALUATION BOARD FOR TLE5014
BFN39E6327
BFN39E6327
Infineon Technologies
TRANS PNP 300V 0.2A SOT223
BCR 512 B6327
BCR 512 B6327
Infineon Technologies
TRANS PREBIAS NPN 300MW SOT23-3
IRFR3706TRR
IRFR3706TRR
Infineon Technologies
MOSFET N-CH 20V 75A DPAK
AUIRLS4030TRL
AUIRLS4030TRL
Infineon Technologies
MOSFET N-CH 100V 180A D2PAK
BTS7750GNUMA1
BTS7750GNUMA1
Infineon Technologies
IC SW TRILITHIC 115MOHM PDSO28
BTS7710GPNTMA1
BTS7710GPNTMA1
Infineon Technologies
IC SW TRILITHIC 110MOHM TO263-15
IR2136JPBF-INF
IR2136JPBF-INF
Infineon Technologies
3-PHASE BRIDGE DRIVER
CY8CTMA340-48LQI-01T
CY8CTMA340-48LQI-01T
Infineon Technologies
IC TRUETOUCH CAPSENSE 48QFN
S29GL128S11FFA010
S29GL128S11FFA010
Infineon Technologies
IC FLASH 128MB FLASH NOR 64FBGA
S29GL064S90TFI040
S29GL064S90TFI040
Infineon Technologies
IC FLASH 64MBIT PARALLEL 48TSOP