IPD80R280P7ATMA1
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Infineon Technologies IPD80R280P7ATMA1

Manufacturer No:
IPD80R280P7ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD80R280P7ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 17A TO252
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:280mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id:3.5V @ 360µA
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 500 V
FET Feature:Super Junction
Power Dissipation (Max):101W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IPD80R280P7ATMA1 IPD80R2K0P7ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 7.2A, 10V 2Ohm @ 940mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 360µA 3.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V 9 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 500 V 175 pF @ 500 V
FET Feature Super Junction -
Power Dissipation (Max) 101W (Tc) 24W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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