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| Part Number | IPD80R1K4CEBTMA1 | IPD80R1K0CEBTMA1 | IPD80R1K4CEATMA1 |
|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Discontinued at Digi-Key | Discontinued at Digi-Key | Active |
| FET Type | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V | 800 V | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Tc) | 5.7A (Tc) | 3.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2.3A, 10V | 950mOhm @ 3.6A, 10V | 1.4Ohm @ 2.3A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 240µA | 3.9V @ 250µA | 3.9V @ 240µA |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V | 31 nC @ 10 V | 23 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 100 V | 785 pF @ 100 V | 570 pF @ 100 V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | 63W (Tc) | 83W (Tc) | 63W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO252-3-11 | PG-TO252-3-11 | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
