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| Part Number | IPD65R660CFDATMA1 | IPD65R660CFDATMA2 | IPD65R660CFDBTMA1 | IPD65R660CFDAATMA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Not For New Designs | Active | Obsolete | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V | 700 V | 650 V | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) | 6A (Tc) | 6A (Tc) | 6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 660mOhm @ 2.1A, 10V | 660mOhm @ 2.1A, 10V | 660mOhm @ 2.1A, 10V | 660mOhm @ 3.22A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 200µA | 4.5V @ 200µA | 4.5V @ 200µA | 4.5V @ 214.55µA |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V | 22 nC @ 10 V | 22 nC @ 10 V | 20 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 615 pF @ 100 V | 615 pF @ 100 V | 615 pF @ 100 V | 543 pF @ 100 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 62.5W (Tc) | 63W (Tc) | 62.5W (Tc) | 62.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO252-3 | PG-TO252-3-313 | PG-TO252-3 | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
