IPD65R420CFDBTMA1
  • Share:

Infineon Technologies IPD65R420CFDBTMA1

Manufacturer No:
IPD65R420CFDBTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD65R420CFDBTMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 8.7A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:420mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id:4.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:870 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):83.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
82

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPD65R420CFDBTMA1 IPD65R420CFDATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 8.7A (Tc) 8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 420mOhm @ 3.4A, 10V 420mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 340µA 4.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 31.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 100 V 870 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 83.3W (Tc) 83.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

SSM3J56ACT,L3F
SSM3J56ACT,L3F
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 1.4A CST3
FQAF13N80
FQAF13N80
onsemi
MOSFET N-CH 800V 8A TO3PF
SSS4N60BT
SSS4N60BT
Fairchild Semiconductor
TRANS MOSFET N-CH 600V 4A 3PIN(3
SQ2309ES-T1_GE3
SQ2309ES-T1_GE3
Vishay Siliconix
MOSFET P-CH 60V 1.7A TO236
SI4464DY-T1-E3
SI4464DY-T1-E3
Vishay Siliconix
MOSFET N-CH 200V 1.7A 8SO
STD7NK40ZT4
STD7NK40ZT4
STMicroelectronics
MOSFET N-CH 400V 5.4A DPAK
STL66N3LLH5
STL66N3LLH5
STMicroelectronics
MOSFET N-CH 30V 80A POWERFLAT
DMN2112SN-7
DMN2112SN-7
Diodes Incorporated
MOSFET N-CH 20V 1.2A SC59-3
NVTFS4C06NTWG
NVTFS4C06NTWG
onsemi
MOSFET N-CH 30V 21A 8WDFN
IRF6662TR1PBF
IRF6662TR1PBF
Infineon Technologies
MOSFET N-CH 100V 8.3A DIRECTFET
IPD12CNE8N G
IPD12CNE8N G
Infineon Technologies
MOSFET N-CH 85V 67A TO252-3
STU13N65M2
STU13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A IPAK

Related Product By Brand

PTFA070601FV4R250XTMA1
PTFA070601FV4R250XTMA1
Infineon Technologies
FET RF LDMOS 60W H37265-3
IPI45N06S3L-13
IPI45N06S3L-13
Infineon Technologies
MOSFET N-CH 55V 45A TO262-3
ICE3AR10080JZTXKLA1
ICE3AR10080JZTXKLA1
Infineon Technologies
1.1A, 113KHZ SWITCHING FREQ-MAX
ICE3A5565PBKSA1
ICE3A5565PBKSA1
Infineon Technologies
IC OFFLINE SW FLYBACK TO220-6
TDA5230XUMA1
TDA5230XUMA1
Infineon Technologies
RF RX ASK/FSK 433-450MHZ 28TSSOP
MB90F548GSPFR-G
MB90F548GSPFR-G
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100QFP
MB89635RPF-GT-1038-BNDE1
MB89635RPF-GT-1038-BNDE1
Infineon Technologies
IC MCU 8BIT 16KB MROM 64QFP
MB96F387YWBPMC-GE2
MB96F387YWBPMC-GE2
Infineon Technologies
IC MCU 16BIT 416KB FLASH 120LQFP
S25FL128SDPBHB213
S25FL128SDPBHB213
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 24BGA
CY7C131-55JXIT
CY7C131-55JXIT
Infineon Technologies
IC SRAM 8KBIT PARALLEL 52PLCC
CYD04S72V-133BBC
CYD04S72V-133BBC
Infineon Technologies
IC SRAM 4MBIT PARALLEL 484FBGA
S34ML01G200TFV000
S34ML01G200TFV000
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I