Infineon Technologies-IPD65R190C7ATMA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	190mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id:	4V @ 290µA
Gate Charge (Qg) (Max) @ Vgs:	23 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1150 pF @ 400 V
FET Feature:	-
Power Dissipation (Max):	72W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO252-3
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

Infineon Technologies IPD65R190C7ATMA1