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| Part Number | IPD60R800CEAUMA1 | IPD50R800CEAUMA1 | IPD60R400CEAUMA1 | IPD60R800CEATMA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active | Active | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V | 500 V | 600 V | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Tc) | 7.6A (Tc) | 14.7A (Tc) | 5.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 13V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 2A, 10V | 800mOhm @ 1.5A, 13V | 400mOhm @ 3.8A, 10V | 800mOhm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 170µA | 3.5V @ 130µA | 3.5V @ 300µA | 3.5V @ 170µA |
| Gate Charge (Qg) (Max) @ Vgs | 17.2 nC @ 10 V | 12.4 nC @ 10 V | 32 nC @ 10 V | 17.2 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 373 pF @ 100 V | 280 pF @ 100 V | 700 pF @ 100 V | 373 pF @ 100 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 74W (Tc) | 60W (Tc) | 112W (Tc) | 48W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO252-3-344 | PG-TO252-2 | PG-TO252-2 | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
