IPD60R750E6ATMA1
  • Share:

Infineon Technologies IPD60R750E6ATMA1

Manufacturer No:
IPD60R750E6ATMA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPD60R750E6ATMA1 Datasheet
ECAD Model:
-
Description:
IPD60R750 - 600V COOLMOS N-CHANN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:750mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs:17.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:373 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):48W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
396

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPD60R750E6ATMA1 IPD60R750E6BTMA1   IPD60R450E6ATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Discontinued at Digi-Key Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 5.7A (Tc) 5.7A (Tc) 9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 750mOhm @ 2A, 10V 750mOhm @ 2A, 10V 450mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 170µA 3.5V @ 170µA 3.5V @ 280µA
Gate Charge (Qg) (Max) @ Vgs 17.2 nC @ 10 V 17.2 nC @ 10 V 28 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 373 pF @ 100 V 373 pF @ 100 V 620 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 48W (Tc) 48W (Tc) 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

BSP135H6906XTSA1
BSP135H6906XTSA1
Infineon Technologies
MOSFET N-CH 600V 120MA SOT223-4
BUK6213-30A,118
BUK6213-30A,118
NXP USA Inc.
TRANSISTOR >30MHZ
ISL9N302AS3ST
ISL9N302AS3ST
Fairchild Semiconductor
MOSFET N-CH 30V 75A D2PAK
RFD12N06RLESM9A
RFD12N06RLESM9A
onsemi
MOSFET N-CH 60V 18A TO252AA
IXFH24N80P
IXFH24N80P
IXYS
MOSFET N-CH 800V 24A TO247AD
IRFR214TR
IRFR214TR
Vishay Siliconix
MOSFET N-CH 250V 2.2A DPAK
IRF1405ZS-7P
IRF1405ZS-7P
Infineon Technologies
MOSFET N-CH 55V 120A D2PAK
FQS4410TF
FQS4410TF
onsemi
MOSFET N-CH 30V 10A 8SOIC
SPN02N60C3 E6433
SPN02N60C3 E6433
Infineon Technologies
MOSFET N-CH 650V 400MA SOT223-4
NVMFS5830NLT1G
NVMFS5830NLT1G
onsemi
MOSFET N-CH 40V 185A SO8FL
BUK7616-55A,118
BUK7616-55A,118
NXP USA Inc.
MOSFET N-CH 55V 65.7A D2PAK
PH1875L,115
PH1875L,115
NXP USA Inc.
MOSFET N-CH 75V 45.8A LFPAK56

Related Product By Brand

IRDC3897
IRDC3897
Infineon Technologies
BOARD EVAL SUPIRBUCK IR3897
EVAL1ED3121MX12HTOBO1
EVAL1ED3121MX12HTOBO1
Infineon Technologies
1ED3121MX12HTOBO1 DEV KIT
BAS70-04E6327
BAS70-04E6327
Infineon Technologies
BAS70 - HIGH SPEED SWITCHING, CL
SPB80N06S2-09
SPB80N06S2-09
Infineon Technologies
MOSFET N-CH 55V 80A TO263-3
AUIRF2903ZS
AUIRF2903ZS
Infineon Technologies
MOSFET N-CH 30V 160A D2PAK
IPP034N03LGHKSA1
IPP034N03LGHKSA1
Infineon Technologies
MOSFET N-CH 30V 80A TO220-3
FF400R07KE4HOSA1
FF400R07KE4HOSA1
Infineon Technologies
IGBT MODULE 650V 1250W
CY8CKIT-038
CY8CKIT-038
Infineon Technologies
KIT DEV PROC MODULE PSOC 4200
CYALKIT-E03
CYALKIT-E03
Infineon Technologies
EXPANSION PACK FOR CYALKIT-E02
MB90F347ESPMC-GS-ER
MB90F347ESPMC-GS-ER
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100LQFP
MB96F395RWBPMC-GSE2-J040
MB96F395RWBPMC-GSE2-J040
Infineon Technologies
IC MCU 16BIT 160KB FLASH 100LQFP
CY15B102N-ZS60XAT
CY15B102N-ZS60XAT
Infineon Technologies
IC FRAM 2MBIT PARALLEL 44TSOP II