IPD60R460CEAUMA1
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Infineon Technologies IPD60R460CEAUMA1

Manufacturer No:
IPD60R460CEAUMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD60R460CEAUMA1 Datasheet
ECAD Model:
-
Description:
CONSUMER
Delivery:
Payment:
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iso9001
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Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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$0.71
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Similar Products

Part Number IPD60R460CEAUMA1 IPD60R400CEAUMA1   IPD60R460CEATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Active Obsolete
FET Type - N-Channel N-Channel
Technology - MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 600 V 600 V
Current - Continuous Drain (Id) @ 25°C - 14.7A (Tc) 9.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V 10V
Rds On (Max) @ Id, Vgs - 400mOhm @ 3.8A, 10V 460mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id - 3.5V @ 300µA 3.5V @ 280µA
Gate Charge (Qg) (Max) @ Vgs - 32 nC @ 10 V 28 nC @ 10 V
Vgs (Max) - ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - 700 pF @ 100 V 620 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) - 112W (Tc) 74W (Tc)
Operating Temperature - -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type - Surface Mount Surface Mount
Supplier Device Package - PG-TO252-2 PG-TO252-3
Package / Case - TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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