IPD60R460CEATMA1
  • Share:

Infineon Technologies IPD60R460CEATMA1

Manufacturer No:
IPD60R460CEATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD60R460CEATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 9.1A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:9.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:460mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id:3.5V @ 280µA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:620 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):74W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
385

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPD60R460CEATMA1 IPD60R460CEAUMA1   IPD60R400CEATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Not For New Designs Obsolete
FET Type N-Channel - N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V - 600 V
Current - Continuous Drain (Id) @ 25°C 9.1A (Tc) - 10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V
Rds On (Max) @ Id, Vgs 460mOhm @ 3.4A, 10V - 400mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 280µA - 3.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V - 32 nC @ 10 V
Vgs (Max) ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 620 pF @ 100 V - 700 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 74W (Tc) - 83W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) - -40°C ~ 150°C (TJ)
Mounting Type Surface Mount - Surface Mount
Supplier Device Package PG-TO252-3 - PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 - TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

IXTQ130N10T
IXTQ130N10T
IXYS
MOSFET N-CH 100V 130A TO3P
IXFP20N50P3M
IXFP20N50P3M
IXYS
MOSFET N-CH 500V 8A TO220AB
STB57N65M5
STB57N65M5
STMicroelectronics
MOSFET N-CH 650V 42A D2PAK
IRLR120TRPBF
IRLR120TRPBF
Vishay Siliconix
MOSFET N-CH 100V 7.7A DPAK
SIDR402DP-T1-RE3
SIDR402DP-T1-RE3
Vishay Siliconix
N-CHANNEL 40-V (D-S) MOSFET
STW70N65M2
STW70N65M2
STMicroelectronics
MOSFET N-CH 650V 63A TO247-3
IRLZ44Z
IRLZ44Z
Infineon Technologies
MOSFET N-CH 55V 51A TO220AB
SI7448DP-T1-E3
SI7448DP-T1-E3
Vishay Siliconix
MOSFET N-CH 20V 13.4A PPAK SO-8
IXTH102N25T
IXTH102N25T
IXYS
MOSFET N-CH 250V 102A TO247
IRFH5250DTR2PBF
IRFH5250DTR2PBF
Infineon Technologies
MOSFET N-CH 25V 40A 8VQFN
AO4476AL_101
AO4476AL_101
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 15A 8SOIC
RW1C015UNT2R
RW1C015UNT2R
Rohm Semiconductor
MOSFET N-CH 20V 1.5A 6WEMT

Related Product By Brand

BCR198B6327HTLA1
BCR198B6327HTLA1
Infineon Technologies
TRANS PREBIAS PNP 200MW SOT23-3
IRF7103PBF
IRF7103PBF
Infineon Technologies
MOSFET 2N-CH 50V 3A 8-SOIC
BF1005SE6327
BF1005SE6327
Infineon Technologies
RF N-CHANNEL MOSFET
SPI21N50C3HKSA1
SPI21N50C3HKSA1
Infineon Technologies
MOSFET N-CH 500V 21A TO262-3
FF200R12MT4
FF200R12MT4
Infineon Technologies
IGBT MODULE
FF450R17IE4BOSA2
FF450R17IE4BOSA2
Infineon Technologies
IGBT MOD 1700V 620A 2800W
AUIPS6041STRL
AUIPS6041STRL
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 D2PAK-5
CYBT-413034-EVAL
CYBT-413034-EVAL
Infineon Technologies
MODULE KIT
CY37256VP160-66AXC
CY37256VP160-66AXC
Infineon Technologies
IC CPLD 256MC 20NS 160LQFP
CY8C20247S-24LKXIT
CY8C20247S-24LKXIT
Infineon Technologies
IC CAPSENCE SMARTSENCE 16K 16QFN
MB90F387PMT-GS-N2E1
MB90F387PMT-GS-N2E1
Infineon Technologies
IC MCU 16BIT 64KB FLASH 48LQFP
CY7C1353S-100AXCT
CY7C1353S-100AXCT
Infineon Technologies
IC SRAM 4.5MBIT PARALLEL 100TQFP