IPD60R460CEATMA1
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Infineon Technologies IPD60R460CEATMA1

Manufacturer No:
IPD60R460CEATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD60R460CEATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 9.1A TO252-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:9.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:460mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id:3.5V @ 280µA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:620 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):74W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IPD60R460CEATMA1 IPD60R460CEAUMA1   IPD60R400CEATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Not For New Designs Obsolete
FET Type N-Channel - N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V - 600 V
Current - Continuous Drain (Id) @ 25°C 9.1A (Tc) - 10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V
Rds On (Max) @ Id, Vgs 460mOhm @ 3.4A, 10V - 400mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 280µA - 3.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V - 32 nC @ 10 V
Vgs (Max) ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 620 pF @ 100 V - 700 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 74W (Tc) - 83W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) - -40°C ~ 150°C (TJ)
Mounting Type Surface Mount - Surface Mount
Supplier Device Package PG-TO252-3 - PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 - TO-252-3, DPak (2 Leads + Tab), SC-63

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