IPD60R385CPBTMA1
  • Share:

Infineon Technologies IPD60R385CPBTMA1

Manufacturer No:
IPD60R385CPBTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD60R385CPBTMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 9A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:385mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id:3.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:790 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
511

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPD60R385CPBTMA1 IPD60R385CPATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 385mOhm @ 5.2A, 10V 385mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 340µA 3.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 100 V 790 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 83W (Tc) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-11 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

SI3400A-TP
SI3400A-TP
Micro Commercial Co
MOSFET N-CH 30V 5.8A SOT23
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
ZVP4424GTA
ZVP4424GTA
Diodes Incorporated
MOSFET P-CH 240V 480MA SOT223
IRFR014TRLPBF
IRFR014TRLPBF
Vishay Siliconix
MOSFET N-CH 60V 7.7A DPAK
STU10N60M2
STU10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
IPD144N06NGBTMA1
IPD144N06NGBTMA1
Infineon Technologies
MOSFET N-CH 60V 50A TO252-3
STB200N4F3
STB200N4F3
STMicroelectronics
MOSFET N-CH 40V 120A D2PAK
BSS84PL6433HTMA1
BSS84PL6433HTMA1
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
NTMFS4925NT1G
NTMFS4925NT1G
onsemi
MOSFET N-CH 30V 9.7A/48A 5DFN
AUIRFSL6535
AUIRFSL6535
Infineon Technologies
MOSFET N-CH 300V 19A TO262-3
TSM80N08CZ C0G
TSM80N08CZ C0G
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 75V 80A TO220
R6020FNX
R6020FNX
Rohm Semiconductor
MOSFET N-CH 600V 20A TO220FM

Related Product By Brand

SPP42N03S2L13
SPP42N03S2L13
Infineon Technologies
MOSFET N-CH 30V 42A TO220-3
SPU04N60C3BKMA1
SPU04N60C3BKMA1
Infineon Technologies
MOSFET N-CH 650V 4.5A TO251-3
IPB160N04S2L03ATMA2
IPB160N04S2L03ATMA2
Infineon Technologies
MOSFET N-CH 40V 160A TO263-7
IRG4RC10UTRL
IRG4RC10UTRL
Infineon Technologies
IGBT 600V 8.5A 38W DPAK
2EDN7424FXTMA1
2EDN7424FXTMA1
Infineon Technologies
IC GATE DRVR LOW-SIDE DSO8
TDK5111FHTMA1
TDK5111FHTMA1
Infineon Technologies
RF TX IC ASK 314-317MHZ 10TFSOP
CY8CLED04DOCD1-56LTXI
CY8CLED04DOCD1-56LTXI
Infineon Technologies
IC MCU 8BIT 16KB FLASH 56VQFN
CY9AF421LPMC1-G-JNE2
CY9AF421LPMC1-G-JNE2
Infineon Technologies
IC MCU 32BIT 64KB FLASH 64LQFP
CY8C29666-24LFXI
CY8C29666-24LFXI
Infineon Technologies
IC MCU 8BIT 32KB FLASH 48QFN
MB90F351SPMC-GSE1
MB90F351SPMC-GSE1
Infineon Technologies
IC MCU 16BIT 64KB FLASH 64LQFP
MB90F591GPF-GE1
MB90F591GPF-GE1
Infineon Technologies
IC MCU 16BIT 384KB FLASH 100QFP
S25FL127SABBHVD03
S25FL127SABBHVD03
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 24BGA