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| Part Number | IPD60R2K0PFD7SAUMA1 | IPD60R1K0PFD7SAUMA1 | IPD60R210PFD7SAUMA1 | IPD60R280PFD7SAUMA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V | 600 V | 650 V | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) | 4.7A (Tc) | 16A (Tc) | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 500mA, 10V | 1Ohm @ 1A, 10V | 210mOhm @ 4.9A, 10V | 280mOhm @ 3.6A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 30µA | 4.5V @ 50µA | 4.5V @ 240µA | 4.5V @ 180µA |
| Gate Charge (Qg) (Max) @ Vgs | 3.8 nC @ 10 V | 6 nC @ 10 V | 23 nC @ 10 V | 15.3 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 134 pF @ 400 V | 230 pF @ 400 V | 1015 pF @ 400 V | 656 pF @ 400 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 20W (Tc) | 26W (Tc) | 64W (Tc) | 51W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO252-3-344 | PG-TO252-3 | PG-TO252-3-344 | PG-TO252-3-344 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
