IPD60R2K0C6BTMA1
  • Share:

Infineon Technologies IPD60R2K0C6BTMA1

Manufacturer No:
IPD60R2K0C6BTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD60R2K0C6BTMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 2.4A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 760mA, 10V
Vgs(th) (Max) @ Id:3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs:6.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:140 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):22.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
85

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPD60R2K0C6BTMA1 IPD60R2K0C6ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 2.4A (Tc) 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 760mA, 10V 2Ohm @ 760mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 60µA 3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs 6.7 nC @ 10 V 6.7 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 100 V 140 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 22.3W (Tc) 22.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

2N7002KW-AU_R1_000A1
2N7002KW-AU_R1_000A1
Panjit International Inc.
SOT-323, MOSFET
PJQ2410_R1_00001
PJQ2410_R1_00001
Panjit International Inc.
DFN2020B-6L, MOSFET
IRF610B
IRF610B
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
IPN70R1K2P7SATMA1
IPN70R1K2P7SATMA1
Infineon Technologies
MOSFET N-CH 700V 4.5A SOT223
STFW3N170
STFW3N170
STMicroelectronics
MOSFET N-CH 1700V 2.6A ISOWATT
SIHP6N40D-E3
SIHP6N40D-E3
Vishay Siliconix
MOSFET N-CH 400V 6A TO220AB
RM5N60S4
RM5N60S4
Rectron USA
MOSFET N-CHANNEL 60V 5A SOT223-3
IXFR120N20
IXFR120N20
IXYS
MOSFET N-CH 200V 105A ISOPLUS247
BSZ050N03MSG
BSZ050N03MSG
Infineon Technologies
BSZ050N03 - 12V-300V N-CHANNEL P
IXFP3N80
IXFP3N80
IXYS
MOSFET N-CH 800V 3.6A TO220AB
SI7405BDN-T1-E3
SI7405BDN-T1-E3
Vishay Siliconix
MOSFET P-CH 12V 16A PPAK 1212-8
2SK3703-1E
2SK3703-1E
onsemi
MOSFET N-CH 60V 30A TO220F-3SG

Related Product By Brand

IPI22N03S4L-15
IPI22N03S4L-15
Infineon Technologies
N-CHANNEL POWER MOSFET
IRF7807PBF
IRF7807PBF
Infineon Technologies
MOSFET N-CH 30V 8.3A 8SO
IRS210614SPBF
IRS210614SPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 14SOIC
IR21591
IR21591
Infineon Technologies
IC BALLAST CNTRL 230KHZ 16DIP
PVU414S-TPBF
PVU414S-TPBF
Infineon Technologies
SSR RELAY SPST-NO 140MA 0-400V
CY95F718JPMC-G-UNE2
CY95F718JPMC-G-UNE2
Infineon Technologies
IC MCU 8BIT 60KB FLASH 80LQFP
CY9AFB44NAPMC-G-MNE2
CY9AFB44NAPMC-G-MNE2
Infineon Technologies
IC MCU 32BIT 100LQFP
MB90020PMT-GS-179-BND
MB90020PMT-GS-179-BND
Infineon Technologies
IC MCU 120LQFP
S25FS512SAGNFB010
S25FS512SAGNFB010
Infineon Technologies
IC FLASH 512MBIT SPI/QUAD 8WSON
S25FL512SAGBHV310
S25FL512SAGBHV310
Infineon Technologies
IC FLASH 512MBIT SPI/QUAD 24BGA
S29GL032N90BFI033
S29GL032N90BFI033
Infineon Technologies
IC FLASH 32MBIT PARALLEL 48FBGA
S34MS02G200BHV003
S34MS02G200BHV003
Infineon Technologies
IC FLASH 2GBIT PARALLEL 63BGA