IPD60R280P7ATMA1
  • Share:

Infineon Technologies IPD60R280P7ATMA1

Manufacturer No:
IPD60R280P7ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD60R280P7ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 12A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:280mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id:4V @ 190µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:761 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):53W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$2.36
376

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPD60R280P7ATMA1 IPD60R180P7ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 3.8A, 10V 180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 4V @ 190µA 4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V 25 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 761 pF @ 400 V 1081 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 53W (Tc) 72W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

IRFS7430TRLPBF
IRFS7430TRLPBF
Infineon Technologies
MOSFET N-CH 40V 195A D2PAK
FDJ127P
FDJ127P
Fairchild Semiconductor
MOSFET P-CH 20V 4.1A SC75-6 FLMP
SQS164ELNW-T1_GE3
SQS164ELNW-T1_GE3
Vishay Siliconix
AUTOMOTIVE N-CHANNEL 60 V (D-S)
BUK9E08-55B,127-NXP
BUK9E08-55B,127-NXP
NXP USA Inc.
PFET, 75A I(D), 55V, 0.0093OHM,
NVMFS5C410NLAFT3G
NVMFS5C410NLAFT3G
onsemi
MOSFET N-CH 40V 50A/330A 5DFN
SIHP22N65E-GE3
SIHP22N65E-GE3
Vishay Siliconix
MOSFET N-CH 650V 22A TO220AB
APT5014SLLG
APT5014SLLG
Microchip Technology
MOSFET N-CH 500V 35A D3PAK
IRF6898MTRPBF
IRF6898MTRPBF
Infineon Technologies
IRF6898 - 12V-300V N-CHANNEL POW
IRFI830G
IRFI830G
Vishay Siliconix
MOSFET N-CH 500V 3.1A TO220-3
IRL630S
IRL630S
Vishay Siliconix
MOSFET N-CH 200V 9A D2PAK
IRFBC40LCSTRL
IRFBC40LCSTRL
Vishay Siliconix
MOSFET N-CH 600V 6.2A D2PAK
IRFB31N20DPBF
IRFB31N20DPBF
Infineon Technologies
MOSFET N-CH 200V 31A TO220AB

Related Product By Brand

SPI07N60C3
SPI07N60C3
Infineon Technologies
N-CHANNEL POWER MOSFET
IRFB4310ZPBF
IRFB4310ZPBF
Infineon Technologies
MOSFET N-CH 100V 120A TO220AB
IRL3103D2PBF
IRL3103D2PBF
Infineon Technologies
MOSFET N-CH 30V 54A TO220AB
IR3800MTR1PBF
IR3800MTR1PBF
Infineon Technologies
IC REG BUCK ADJUSTABLE 12A PQFN
IRU1207-18CSTR
IRU1207-18CSTR
Infineon Technologies
IC REG LINEAR 1.8V 1A 8SOIC
CY8CTMA140-LQI-01
CY8CTMA140-LQI-01
Infineon Technologies
IC TRUETOUCH CAPSENSE 36QFN
MB90020PMT-GS-287
MB90020PMT-GS-287
Infineon Technologies
IC MCU 120LQFP
MB90F867ESPMC-G-SNE1
MB90F867ESPMC-G-SNE1
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100LQFP
MB91F526JSCPMC-GSE2
MB91F526JSCPMC-GSE2
Infineon Technologies
IC MCU 32B 1.0625MB FLSH 120LQFP
S25FL128SDSMFBG13
S25FL128SDSMFBG13
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 16SOIC
CY7C1418BV18-250BZXC
CY7C1418BV18-250BZXC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA
CY9AF112NPMC-GE1
CY9AF112NPMC-GE1
Infineon Technologies
IC MCU 32BIT FLASH 100-LQFP