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| Part Number | IPD60R1K5CEAUMA1 | IPD65R1K5CEAUMA1 | IPD60R1K0CEAUMA1 | IPD60R1K5CEATMA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Obsolete | Active | Discontinued at Digi-Key |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V | 700 V | 600 V | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) | 5.2A (Tc) | 6.8A (Tc) | 3.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.1A, 10V | 1.5Ohm @ 1A, 10V | 1Ohm @ 1.5A, 10V | 1.5Ohm @ 1.1A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA | 3.5V @ 100µA | 3.5V @ 130µA | 3.5V @ 90µA |
| Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 10 V | 10.5 nC @ 10 V | 13 nC @ 10 V | 9.4 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 100 V | 225 pF @ 100 V | 280 pF @ 100 V | 200 pF @ 100 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 49W (Tc) | 53W (Tc) | 61W (Tc) | 28W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO252-3 | PG-TO252-3 | PG-TO252-3-344 | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
