IPD60R180P7SAUMA1
  • Share:

Infineon Technologies IPD60R180P7SAUMA1

Manufacturer No:
IPD60R180P7SAUMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD60R180P7SAUMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 18A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id:4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1081 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):72W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$2.02
219

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPD60R180P7SAUMA1 IPD60R280P7SAUMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 5.6A, 10V 280mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 4V @ 280µA 4V @ 190µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 18 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1081 pF @ 400 V 761 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 72W (Tc) 53W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

FDD044AN03L
FDD044AN03L
Fairchild Semiconductor
MOSFET N-CH 30V 21A/35A TO252AA
CSD19532Q5BT
CSD19532Q5BT
Texas Instruments
MOSFET N-CH 100V 100A 8VSON
STF10N65K3
STF10N65K3
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
SUP90N06-6M0P-E3
SUP90N06-6M0P-E3
Vishay Siliconix
MOSFET N-CH 60V 90A TO220AB
TSM089N08LCR RLG
TSM089N08LCR RLG
Taiwan Semiconductor Corporation
MOSFET N-CH 80V 67A 8PDFN
STH410N4F7-2AG
STH410N4F7-2AG
STMicroelectronics
MOSFET N-CH 40V 200A H2PAK-2
IRFD9024
IRFD9024
Vishay Siliconix
MOSFET P-CH 60V 1.6A 4DIP
ZVN2106GTC
ZVN2106GTC
Diodes Incorporated
MOSFET N-CH 60V 710MA SOT223
BUK9E06-55B,127
BUK9E06-55B,127
Nexperia USA Inc.
MOSFET N-CH 55V 75A I2PAK
IRFS3306PBF
IRFS3306PBF
Infineon Technologies
MOSFET N-CH 60V 120A D2PAK
STB15N65M5
STB15N65M5
STMicroelectronics
MOSFET N-CH 650V 11A D2PAK
IRF6893MTR1PBF
IRF6893MTR1PBF
Infineon Technologies
MOSFET N-CH 25V 29A DIRECTFET

Related Product By Brand

IPD78CN10NG
IPD78CN10NG
Infineon Technologies
POWER FIELD-EFFECT TRANSISTOR, 1
SPP80N06S2-H5
SPP80N06S2-H5
Infineon Technologies
MOSFET N-CH 55V 80A TO220-3
SPS03N60C3BKMA1
SPS03N60C3BKMA1
Infineon Technologies
MOSFET N-CH 650V 3.2A TO251-3
FD200R12KE3PHOSA1
FD200R12KE3PHOSA1
Infineon Technologies
IGBT MODULE 1200V 200A
IRGP30B120KDPBF
IRGP30B120KDPBF
Infineon Technologies
IGBT 1200V 60A 300W TO247AC
SAKTC1724N192F133HRACKXUMA1
SAKTC1724N192F133HRACKXUMA1
Infineon Technologies
32-BIT RISC FLASH MCU
ICB1FL01G
ICB1FL01G
Infineon Technologies
IC PFC/BALLAST CTR 100KHZ DSO-18
MB90867ESPF-GS-225
MB90867ESPF-GS-225
Infineon Technologies
IC MCU 16BIT 128KB MROM 100QFP
MB90020PMT-GS-254
MB90020PMT-GS-254
Infineon Technologies
IC MCU 120LQFP
MB95176MPMC1-G-001E1
MB95176MPMC1-G-001E1
Infineon Technologies
IC MCU 8BIT FFMC-8L-0.5B 64LQFP
FM25L16B-DGTR
FM25L16B-DGTR
Infineon Technologies
IC FRAM 16KBIT SPI 20MHZ 8TDFN
CY15E004Q-SXE
CY15E004Q-SXE
Infineon Technologies
IC FRAM 4KBIT SPI 16MHZ 8SOIC