IPD600N25N3GBTMA1
  • Share:

Infineon Technologies IPD600N25N3GBTMA1

Manufacturer No:
IPD600N25N3GBTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD600N25N3GBTMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 250V 25A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2350 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
444

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPD600N25N3GBTMA1 IPD600N25N3GATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 250 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc) 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 25A, 10V 60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 90µA 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2350 pF @ 100 V 2350 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 136W (Tc) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

HAT2165N-EL-E
HAT2165N-EL-E
Renesas Electronics America Inc
MOSFET N-CH 30V 55A 8LFPAK
PMZB1200UPEYL
PMZB1200UPEYL
NXP Semiconductors
NEXPERIA PMZB1200U - 30V, P-CHAN
PSMN7R0-60YS,115
PSMN7R0-60YS,115
Nexperia USA Inc.
MOSFET N-CH 60V 89A LFPAK56
IRLR8743TRPBF
IRLR8743TRPBF
Infineon Technologies
MOSFET N-CH 30V 160A DPAK
NTR3A052PZT1G
NTR3A052PZT1G
onsemi
MOSFET P-CH 20V 3.6A SOT23
IPD75N04S4-06
IPD75N04S4-06
Infineon Technologies
IPD75N04 - 20V-40V N-CHANNEL AUT
IRF1104S
IRF1104S
Infineon Technologies
MOSFET N-CH 40V 100A D2PAK
SSR1N60BTM_F080
SSR1N60BTM_F080
onsemi
MOSFET N-CH 600V 900MA DPAK
TPH3202LD
TPH3202LD
Transphorm
GANFET N-CH 600V 9A 4PQFN
AOD403_030
AOD403_030
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 15A/70A TO252
PSMN4R6-100XS,127
PSMN4R6-100XS,127
NXP USA Inc.
MOSFET N-CH 100V 70.4A TO220F
RJ1U330AAFRGTL
RJ1U330AAFRGTL
Rohm Semiconductor
MOSFET N-CH 250V 33A LPTS

Related Product By Brand

SPA11N60C3
SPA11N60C3
Infineon Technologies
POWER FIELD-EFFECT TRANSISTOR, 1
AUIRF7303Q
AUIRF7303Q
Infineon Technologies
MOSFET 2N-CH 30V 5.3A 8SOIC
XE162HN16F80LAAFXUMA1
XE162HN16F80LAAFXUMA1
Infineon Technologies
IC MCU 16BIT 128KB FLASH 64LQFP
PEF24911HV1.3
PEF24911HV1.3
Infineon Technologies
ISDN ECHOCANCELLER DFE
IR3081M
IR3081M
Infineon Technologies
IC PHASE CONTROLLER 28-MLPQ
IFX25001TSV10AKSA1
IFX25001TSV10AKSA1
Infineon Technologies
IC REG LINEAR VOLTAGE REG
CY8C4247BZI-L479T
CY8C4247BZI-L479T
Infineon Technologies
IC MCU 32BIT 128KB FLSH 124VFBGA
MB90598GPF-G-153
MB90598GPF-G-153
Infineon Technologies
IC MCU 16BIT 128KB MROM 100QFP
MB90349CASPFV-GS-165E1
MB90349CASPFV-GS-165E1
Infineon Technologies
IC MCU 16BIT 256KB MROM 100LQFP
MB90F884CPMC-G-N2E1
MB90F884CPMC-G-N2E1
Infineon Technologies
IC MCU 16BIT 512KB FLASH 100LQFP
S25FL127SABMFB100
S25FL127SABMFB100
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 8SOIC
S25FL208K0RMFI013
S25FL208K0RMFI013
Infineon Technologies
IC FLSH 8MBIT SPI/DUAL I/O 8SOIC