IPD50R950CEAUMA1
  • Share:

Infineon Technologies IPD50R950CEAUMA1

Manufacturer No:
IPD50R950CEAUMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD50R950CEAUMA1 Datasheet
ECAD Model:
-
Description:
CONSUMER
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

$0.36
590

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPD50R950CEAUMA1 IPD50R650CEAUMA1   IPD50R950CEATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Discontinued at Digi-Key
FET Type - N-Channel N-Channel
Technology - MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 500 V 500 V
Current - Continuous Drain (Id) @ 25°C - 9A (Tc) 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 13V 13V
Rds On (Max) @ Id, Vgs - 650mOhm @ 1.8A, 13V 950mOhm @ 1.2A, 13V
Vgs(th) (Max) @ Id - 3.5V @ 150µA 3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs - 15 nC @ 10 V 10.5 nC @ 10 V
Vgs (Max) - ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - 342 pF @ 100 V 231 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) - 69W (Tc) 53W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount Surface Mount
Supplier Device Package - PG-TO252-3-344 PG-TO252-3
Package / Case - TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

FDS2572
FDS2572
onsemi
MOSFET N-CH 150V 4.9A 8SOIC
SI2347DS-T1-GE3
SI2347DS-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 5A SOT23-3
IPB65R190C7ATMA2
IPB65R190C7ATMA2
Infineon Technologies
MOSFET N-CH 650V 13A TO263-3
NVMFS5C430NAFT3G
NVMFS5C430NAFT3G
onsemi
MOSFET N-CH 40V 35A/185A 5DFN
2SK3711
2SK3711
Sanken
MOSFET N-CH 60V 70A TO3P
STP18N65M5
STP18N65M5
STMicroelectronics
MOSFET N-CH 650V 15A TO220
FDS6690AS
FDS6690AS
Fairchild Semiconductor
SMALL SIGNAL FIELD-EFFECT TRANSI
IRF7220TRPBF
IRF7220TRPBF
Infineon Technologies
MOSFET P-CH 14V 11A 8SO
SI1472DH-T1-E3
SI1472DH-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 5.6A SC70-6
SI7459DP-T1-GE3
SI7459DP-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 13A PPAK SO-8
AO4724
AO4724
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 7.7A 8SOIC
FCPF11N60_G
FCPF11N60_G
onsemi
MOSFET N-CH 600V 11A TO220F

Related Product By Brand

IPS65R950C6AKMA1
IPS65R950C6AKMA1
Infineon Technologies
MOSFET N-CH 650V 4.5A TO251-3
IRF7321D2TR
IRF7321D2TR
Infineon Technologies
MOSFET P-CH 30V 4.7A 8SO
IRFI2807
IRFI2807
Infineon Technologies
MOSFET N-CH 75V 40A TO220AB FP
IRF3709ZCSTRL
IRF3709ZCSTRL
Infineon Technologies
MOSFET N-CH 30V 87A D2PAK
FM4-120L-S6E2HG
FM4-120L-S6E2HG
Infineon Technologies
S6E2HG EVAL BRD
CY3280-BSM
CY3280-BSM
Infineon Technologies
MODULE SIMPLE BUTTON CAPSENSE
CY22800FXC-019A
CY22800FXC-019A
Infineon Technologies
IC PROG CLOCK GEN 8-SOIC
CY9AF141MBPMC1-G-JNE2
CY9AF141MBPMC1-G-JNE2
Infineon Technologies
IC MCU 32BIT 64KB FLASH 80LQFP
MB90F022CPF-GS-9006
MB90F022CPF-GS-9006
Infineon Technologies
IC MCU MICOM FLASH 100QFP
MB91F264BPMC-G-101E1
MB91F264BPMC-G-101E1
Infineon Technologies
IC MCU 32BIT 256KB FLASH 100LQFP
S25FL512SAGMFA011
S25FL512SAGMFA011
Infineon Technologies
IC FLASH 512MBIT SPI/QUAD 16SOIC
S70GL02GT12FHIV23
S70GL02GT12FHIV23
Infineon Technologies
IC FLASH 2GBIT PARALLEL 64FBGA