IPD50R800CEATMA1
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Infineon Technologies IPD50R800CEATMA1

Manufacturer No:
IPD50R800CEATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD50R800CEATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N CH 500V 5A TO252
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):13V
Rds On (Max) @ Id, Vgs:800mOhm @ 1.5A, 13V
Vgs(th) (Max) @ Id:3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs:12.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:280 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IPD50R800CEATMA1 IPD50R800CEAUMA1   IPD50R800CEBTMA1   IPD60R800CEATMA1   IPD50R500CEATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Discontinued at Digi-Key Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc) 7.6A (Tc) 5A (Tc) 5.6A (Tc) 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V 13V 13V 10V 13V
Rds On (Max) @ Id, Vgs 800mOhm @ 1.5A, 13V 800mOhm @ 1.5A, 13V 800mOhm @ 1.5A, 13V 800mOhm @ 2A, 10V 500mOhm @ 2.3A, 13V
Vgs(th) (Max) @ Id 3.5V @ 130µA 3.5V @ 130µA 3.5V @ 130µA 3.5V @ 170µA 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 12.4 nC @ 10 V 12.4 nC @ 10 V 12.4 nC @ 10 V 17.2 nC @ 10 V 18.7 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 100 V 280 pF @ 100 V 280 pF @ 100 V 373 pF @ 100 V 433 pF @ 100 V
FET Feature - - Super Junction - -
Power Dissipation (Max) 60W (Tc) 60W (Tc) 40W (Tc) 48W (Tc) 57W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-2 PG-TO252-3 PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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