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| Part Number | IPD50R650CEATMA1 | IPD50R650CEAUMA1 | IPD50R650CEBTMA1 | IPD60R650CEATMA1 | IPD50R950CEATMA1 |
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Obsolete | Active | Discontinued at Digi-Key | Obsolete | Discontinued at Digi-Key |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V | 500 V | 500 V | 600 V | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 6.1A (Tc) | 9A (Tc) | 6.1A (Tc) | 7A (Tc) | 4.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 13V | 13V | 13V | 10V | 13V |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 1.8A, 13V | 650mOhm @ 1.8A, 13V | 650mOhm @ 1.8A, 13V | 650mOhm @ 2.4A, 10V | 950mOhm @ 1.2A, 13V |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA | 3.5V @ 150µA | 3.5V @ 150µA | 3.5V @ 200µA | 3.5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V | 15 nC @ 10 V | 15 nC @ 10 V | 20.5 nC @ 10 V | 10.5 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 342 pF @ 100 V | 342 pF @ 100 V | 342 pF @ 100 V | 440 pF @ 100 V | 231 pF @ 100 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 69W (Tc) | 69W (Tc) | 47W (Tc) | 63W (Tc) | 53W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO252-3 | PG-TO252-3-344 | PG-TO252-3 | PG-TO252-3 | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
