IPD50R3K0CEBTMA1
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Infineon Technologies IPD50R3K0CEBTMA1

Manufacturer No:
IPD50R3K0CEBTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD50R3K0CEBTMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 1.7A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):13V
Rds On (Max) @ Id, Vgs:3Ohm @ 400mA, 13V
Vgs(th) (Max) @ Id:3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs:4.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:84 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):18W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IPD50R3K0CEBTMA1 IPD50R2K0CEBTMA1   IPD50R380CEBTMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Discontinued at Digi-Key
FET Type N-Channel - N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V - 500 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc) - 14.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V - 13V
Rds On (Max) @ Id, Vgs 3Ohm @ 400mA, 13V - 380mOhm @ 3.2A, 13V
Vgs(th) (Max) @ Id 3.5V @ 30µA - 3.5V @ 260µA
Gate Charge (Qg) (Max) @ Vgs 4.3 nC @ 10 V - 24.8 nC @ 10 V
Vgs (Max) ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 84 pF @ 100 V - 584 pF @ 100 V
FET Feature - - Super Junction
Power Dissipation (Max) 18W (Tc) - 73W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount - Surface Mount
Supplier Device Package PG-TO252-3 - PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 - TO-252-3, DPak (2 Leads + Tab), SC-63

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