IPD50R2K0CEBTMA1
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Infineon Technologies IPD50R2K0CEBTMA1

Manufacturer No:
IPD50R2K0CEBTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD50R2K0CEBTMA1 Datasheet
ECAD Model:
-
Description:
CONSUMER
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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Similar Products

Part Number IPD50R2K0CEBTMA1 IPD50R3K0CEBTMA1   IPD50R280CEBTMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Discontinued at Digi-Key
FET Type - N-Channel N-Channel
Technology - MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 500 V 500 V
Current - Continuous Drain (Id) @ 25°C - 1.7A (Tc) 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 13V 13V
Rds On (Max) @ Id, Vgs - 3Ohm @ 400mA, 13V 280mOhm @ 4.2A, 13V
Vgs(th) (Max) @ Id - 3.5V @ 30µA 3.5V @ 350µA
Gate Charge (Qg) (Max) @ Vgs - 4.3 nC @ 10 V 32.6 nC @ 10 V
Vgs (Max) - ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - 84 pF @ 100 V 773 pF @ 100 V
FET Feature - - Super Junction
Power Dissipation (Max) - 18W (Tc) 92W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount Surface Mount
Supplier Device Package - PG-TO252-3 PG-TO252-3-11
Package / Case - TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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