IPD50R2K0CEAUMA1
  • Share:

Infineon Technologies IPD50R2K0CEAUMA1

Manufacturer No:
IPD50R2K0CEAUMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD50R2K0CEAUMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 2.4A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):13V
Rds On (Max) @ Id, Vgs:2Ohm @ 600mA, 13V
Vgs(th) (Max) @ Id:3.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:124 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):33W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$0.65
278

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPD50R2K0CEAUMA1 IPD50R3K0CEAUMA1   IPD50R280CEAUMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 550 V
Current - Continuous Drain (Id) @ 25°C 2.4A (Tc) 1.7A (Tc) 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 13V 13V 13V
Rds On (Max) @ Id, Vgs 2Ohm @ 600mA, 13V 3Ohm @ 400mA, 13V 280mOhm @ 4.2A, 13V
Vgs(th) (Max) @ Id 3.5V @ 50µA 3.5V @ 30µA 3.5V @ 350µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 10 V 4.3 nC @ 10 V 32.6 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 124 pF @ 100 V 84 pF @ 100 V 773 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 33W (Tc) 26W (Tc) 119W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

BUK7535-55A,127
BUK7535-55A,127
NXP USA Inc.
PFET, 35A I(D), 55V, 0.035OHM, 1
NTGS4141NT1G
NTGS4141NT1G
onsemi
MOSFET N-CH 30V 3.5A 6TSOP
NTD20N03L27T4G
NTD20N03L27T4G
onsemi
MOSFET N-CH 30V 20A DPAK
BSP296NH6433XTMA1
BSP296NH6433XTMA1
Infineon Technologies
MOSFET N-CH 100V 1.2A SOT223-4
IPP062NE7N3GXKSA1
IPP062NE7N3GXKSA1
Infineon Technologies
MOSFET N-CH 75V 80A TO220-3
IPP60R600C6
IPP60R600C6
Infineon Technologies
7.3A, 600V, 0.6OHM, N-CHANNEL MO
IXFR21N100Q
IXFR21N100Q
IXYS
MOSFET N-CH 1000V 18A ISOPLUS247
SI1056X-T1-E3
SI1056X-T1-E3
Vishay Siliconix
MOSFET N-CH 20V 1.32A SC89-6
DKI04035
DKI04035
Sanken
MOSFET N-CH 40V 48A TO252
NVTFS4824NWFTAG
NVTFS4824NWFTAG
onsemi
MOSFET N-CH 30V 18.2A 8WDFN
PHD82NQ03LT,118
PHD82NQ03LT,118
NXP USA Inc.
MOSFET N-CH 30V 75A DPAK
RCJ331N25TL
RCJ331N25TL
Rohm Semiconductor
250V 33A, NCH, TO-263S, POWER MO

Related Product By Brand

FS200R12PT4PBOSA1
FS200R12PT4PBOSA1
Infineon Technologies
IGBT MOD 1200V 200A 20MW
CHL8550CRT
CHL8550CRT
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 10DFN
CY23S05SXC-1HT
CY23S05SXC-1HT
Infineon Technologies
IC CLK ZDB 5OUT 133MHZ 8SOIC
CY23EP09ZXI-1HT
CY23EP09ZXI-1HT
Infineon Technologies
IC CLK ZDB 9OUT 220MHZ 16TSSOP
CY8C4125AZI-M443
CY8C4125AZI-M443
Infineon Technologies
IC MCU 32BIT 32KB FLASH 48TQFP
MB90223PF-GT-230-BND
MB90223PF-GT-230-BND
Infineon Technologies
IC MCU 16BIT 64KB MROM 120PQFP
CY15E016J-SXA
CY15E016J-SXA
Infineon Technologies
IC FRAM 16KBIT I2C 1MHZ 8SOIC
CY7C1049B-17VC
CY7C1049B-17VC
Infineon Technologies
IC SRAM 4MBIT PARALLEL 36SOJ
CY7C1399BN-15VXI
CY7C1399BN-15VXI
Infineon Technologies
IC SRAM 256KBIT PARALLEL 28SOJ
CY62148VNBLL-70BAI
CY62148VNBLL-70BAI
Infineon Technologies
IC SRAM 4MBIT PARALLEL 36VFBGA
CY62167G30-45BVXI
CY62167G30-45BVXI
Infineon Technologies
NO WARRANTY
CY91F523FSEPMC-GTE1
CY91F523FSEPMC-GTE1
Infineon Technologies
IC MCU 32BIT 120LQFP