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| Part Number | IPD50P04P4L11ATMA1 | IPD50P04P4L11ATMA2 | IPD50P03P4L11ATMA1 |
|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Not For New Designs | Active | Not For New Designs |
| FET Type | P-Channel | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V | 40 V | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) | 50A (Tc) | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 10.6mOhm @ 50A, 10V | 10.6mOhm @ 50A, 10V | 10.5mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 85µA | 2.2V @ 85µA | 2V @ 85µA |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V | 59 nC @ 10 V | 55 nC @ 10 V |
| Vgs (Max) | ±16V | +5V, -16V | +5V, -16V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 25 V | 3900 pF @ 25 V | 3770 pF @ 25 V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | 58W (Tc) | 58W (Tc) | 58W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO252-3-313 | PG-TO252-3-313 | PG-TO252-3-11 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
